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Negative Differential Resistance and Instabilities in 2-D Semiconductors

  • Book
  • © 1993

Overview

Editors:
  1. N. Balkan

    1. University of Essex, Colchester, UK

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  2. B. K. Ridley

    1. University of Essex, Colchester, UK

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  3. A. J. Vickers

    1. University of Essex, Colchester, UK

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Part of the book series: NATO Science Series B: (NSSB, volume 307)

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Table of contents (30 chapters)

  1. Front Matter

    Pages i-ix
    Download chapter PDF

  2. Negative Differential Resistance: A Brief History and Review

    • B. K. Ridley
    Pages 1-21

  3. Electronic Transport in Semiconductors at High Energies: Effects of the Energy Band Structure

    • Karl Hess
    Pages 23-35

  4. Theory of Oscillatory Instabilities in Parallel and Perpendicular Transport in Heterostructures

    • Eckehard Schöll
    Pages 37-51

  5. Light Emitting Logic Devices Based on Real Space Transfer in Complementary InGaAs/InAlAs Heterostructures

    • Serge Luryi, Marco Mastrapasqua
    Pages 53-82

  6. Electron Mobility in Delta-Doped Quantum Well Structures

    • W. Ted Masselink
    Pages 83-98

  7. Application of a New Multi-Scale Approach to Transport in a GaAs/AlAs Heterojunction Structure

    • P. D. Yoder, K. Hess
    Pages 99-108

  8. Negative Differential Resistance, Instabilities, and Current Filamentation in GaAs/AlxGa1-xAs Heterojunctions

    • J. H. Wolter, J. E. M. Haverkort, P. Hendriks, E. A. E. Zwaal
    Pages 109-126

  9. Hot Electron Instabilities in QWs: Acoustoelectric Effect and Two-Stream Plasma Instability

    • Rita Gupta, N. Balkan, B. K. Ridley
    Pages 127-139

  10. Hybrid Optical Phonons in Lower Dimensional Systems and Their Interaction with Hot Electrons

    • N. C. Constantinou, B. K. Ridley
    Pages 141-151

  11. Negative Differential Resistance in Superlattice and Heterojunction Channel Conduction Devices

    • Steven W. Kirchoefer
    Pages 153-170

  12. Electronic Transport in a Laterally Patterned Resonant Structure

    • M. Cemal Yalabik
    Pages 171-177

  13. Travelling Domains in Modulation-Doped GaAs/AlGaAs Heterostructures

    • R. Döttling, E. Schöll
    Pages 179-188

  14. Negative Differential Resistance and Domain Formation in Semiconductor Superlattices

    • H. T. Grahn
    Pages 189-202

  15. High Frequency DC Induced Oscillations in 2D

    • A. J. Vickers, E. S.-M. Tsui, A. Straw
    Pages 203-213

  16. Hot Electron Induced Impact Ionization and Light Emission in GaAs Based MESFETs, HEMTs, PM-HEMTs and HBTs

    • C. Canali, C. Tedesco, E. Zanoni, M. Manfredi, A. Paccagnella
    Pages 215-249

  17. Negative Differential Resistance, High Field Domains and Microwave Emission in GaAs Multi-Quantum Wells

    • A. Straw, A. Da Cunha, N. Balkan, B. K. Ridley
    Pages 251-260

  18. On Negative Differential Resistance and Spontaneous Dissipative Structure Formation in the Electric Break-Down of p-Ge at Low Temperatures

    • Joachim Peinke, Wilfried Clauss, Achim Kittel, Jürgen Parisi, Uwe Rau, Reinhard Richter
    Pages 261-268

  19. Dissipative Structures in Bistable Electronic and Optoelectronic Semiconductor Devices

    • Ralf Symanczyk, Steffen Knigge, Dieter Jäger
    Pages 269-282

  20. NDR, Hot Electron Instabilities and Light Emission in LDS

    • A. Da Cunha, A. Straw, N. Balkan
    Pages 283-304
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Keywords

About this book

Instabilities associated with hot electrons in semiconductors have been investigated from the beginning of transistor physics in the 194Os. The study of NDR and impact ionization in bulk material led to devices like the Gunn diode and the avalanche-photo-diode. In layered semiconductors domain formation in HEMTs can lead to excess gate leakage and to excess noise. The studies of hot electron transport parallel to the layers in heterostructures, single and multiple, have shown abundant evidence of electrical instability and there has been no shortage of suggestions concerning novel NDR mechanisms, such as real space transfer, scattering induced NDR, inter-sub band transfer, percolation effects etc. Real space transfer has been exploited in negative-resistance PETs (NERFETs) and in the charge-injection transistor (CHINT) and in light emitting logic devices, but far too little is known and understood about other NDR mechanisms with which quantum well material appears to be particularly well-endowed, for these to be similarly exploited. The aim of this book is therefore to collate what is known and what is not known about NDR instabilities, and to identify promising approaches and techniques which will increase our understanding of the origin of these instabilities which have been observed during the last decade of investigations into high-field longitudinal transport in layered semiconductors. The book covers the fundamental properties of hot carrier transport and the associated instabilities and light emission in 2-dimensional semiconductors dealing with both theory and experiment.

Editors and Affiliations

  • University of Essex, Colchester, UK

    N. Balkan, B. K. Ridley, A. J. Vickers

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