The Physics of Submicron Structures

1. Front Matter

   Pages i-x

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2. Quantum-Well and Superlattice Lasers: Fundamental Effects

   • N. Holonyak Jr.

   Pages 1-18

3. n-i-p-i Doping Superlattices-Semiconductors with Tunable Electronic Properties

   • Gottfried H. Döhler

   Pages 19-32

4. Tunneling Phenomena in Multibarrier Structures

   • Johnson Lee, M. O. Vassell, H. F. Lockwood

   Pages 33-39

5. Enhancement of the Ionization Rates Ratio by Spatial Separation of Electrons and Holes in Multilayer Heterojunction Structures: Towards a Solid State Photomultiplier

   • F. Capasso

   Pages 41-51

6. Two-Dimensional Electron Gas Fet (TEGFET)

   • Nuyen T. Linh, D. Delagebeaudeuf

   Pages 53-61

7. Physics and Modeling Considerations for VLSI Devices

   • H. L. Grubin, J. P. Kreskovsky, G. J. Iafrate, D. K. Ferry, R. F. Greene

   Pages 63-75

8. Design Considerations for Submicron-Scale GaAs MESFETs

   • F. A. Buot, Jeffrey Frey

   Pages 77-92

9. Millimeter Impatt Diodes

   • D. Lippens, E. Constant, M. R. Friscourt, P. A. Rolland, G. Salmer

   Pages 93-99

10. A Dynamic Monte Carlo Simulation of Conduction in Submicron Gaas Devices at 77 K

    • P. Hesto, J. F. Pone, R. Castagné, J. L. Pelouard

    Pages 101-106

11. Monte Carlo Simulation of Electron Dynamics in Mos Inversion Channels

    • Hao Chu, M. Charef, J. Zimmermann, R. Fauquembergue, E. Constant

    Pages 107-113

12. Performance of Submicron Silicon MOSFETs Fabricated by Edge-Defined Vertical-Etch Technique

    • H. Shichijo, Y. T. Lin, T. C. Holloway, Y. C. Lin, W. R. Hunter

    Pages 115-125

13. Modeling of Surface Scattering in the Monte Carlo Simulation of Short Channel MOSFET

    • Young June Park, Ting-Wei Tang, David H. Navon

    Pages 127-138

14. Generation of Interface States and Charge Trapping in MOSFETs

    • Karl R. Hofmann, Gerhard Dorda

    Pages 139-146

15. High Field Surface Drift Velocities in Silicon

    • D. F. Nelson, J. A. Cooper Jr.

    Pages 147-158

16. Phonons in Confined Geometries

    • A. A. Maradudin

    Pages 159-169

17. Monte Carlo Simulation of Space-Charge Injection Fet

    • R. Fauquembergue, M. Pernisek, E. Constant

    Pages 171-176

18. Ensemble Monte Carlo Studies of High Field Spikes and Planar Doped Barrier Devices

    • R. J. Trew, R. Sultan, J. R. Hauser, M. A. Littlejohn

    Pages 177-183

19. Self-Consistent Particle-Field Monte Carlo Simulation of Semiconductor Microstructures

    • Peter A. Blakey, Steven S. Cherensky, Paul Summers

    Pages 185-194

20. Electron Distribution Function in GaAs for High and Low Electric Fields

    • B. Abraham-Shrauner, S. H. Soh

    Pages 195-201

Research on electronic transport in ultra small dimensions has been highly stimulated by the sensational developments in silicon technology and very large scale integration. The papers in this volume, however, have been influenced to no lesser extent by the advent of molecular beam epitaxy and metal/organic chemical vapor deposition which has made possible the control of semiconductor boundaries on a quantum level. This new control of boundary condi­ tions in ultra small electronic research is the mathematical reason for a whole set of innovative ideas. For the first time in the history of semiconductors, it is possible to design device functions from physical considerations involving ~ngstom scale dimensions. At the time the meeting was held, July 1982, it was one of the first strong signals of the powerful developments in this area. During the meeting, important questions have been answered concerning ballistic transport, Monte Carlo simulations of high field transport and other developments pertinent to new device concepts and the understanding of small devices from physics to function. The committee members want to express their deep appreciation to the speakers who have made the meeting a success. The USER pro­ ject of DOD has been a vital stimulous and thanks go to the Army Research Office and the Office of Naval Research for financial sup­ port. Urbana, January 1984 K. Hess, Conference Chairman J. R. Brews L. R. Cooper, Ex Officio D. K. Ferry H. L. Grubin G. J. Iafrate M. I. Nathan A. F.

• In silico
• development
• diffusion
• electron
• influence
• metals
• paper
• physics
• scattering
• semiconductor
• silicon
• simulation
• spectroscopy
• structure
• transport

• Scientific Research Associates, Inc., Glastonbury, USA

  H. L. Grubin

• University of Illinois, Urbana-Champaign, USA

  K. Hess

• U.S. Army Electronics Technology and Devices Laboratory, Fort Monmouth, USA

  G. J. Iafrate

• Arizona State University, Tempe, USA

  D. K. Ferry

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