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Neutron Transmutation Doping of Semiconductor Materials

  • Book
  • © 1984

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Editors:
  1. Robert D. Larrabee

    1. National Bureau of Standards, USA

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Table of contents (24 chapters)

  1. Front Matter

    Pages i-xiii
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  2. Nonsilicon NTD Materials

    1. Neutron Transmutation Doping of p-Type Czochralski-Grown Gallium Arsenide

      • M. H. Young, A. T. Hunter, R. Baron, O. J. Marsh, H. V. Winston, R. R. Hart
      Pages 1-20

    2. NTD Germanium: A Novel Material for Low Temperature Bolometers

      • E. E. Haller, N. P. Palaio, M. Rodder, W. L. Hansen, E. Kreysa
      Pages 21-36

    3. Reliable Identification of Residual Donors in High Purity Epitaxial Gallium Arsenide by Transmutation Doping

      • M. N. Afsar
      Pages 37-51

    4. Spallation Neutron Damage in Group IV, III–V and II–VI Semiconductors at 5 K

      • R. C. Birtcher, T. L. Scott, J. M. Meese
      Pages 53-82

  4. Practical Utilization of NTD Material

    1. The Development of the Market for Neutron Transmutation Doped Silicon

      • Heinz Herzer, Fritz G. Vieweg-Gutberlet
      Pages 157-165

    2. Neutron Transmutation Doped Silicon for Power Semiconductor Devices

      • B. Jayant Baliga
      Pages 167-180

    3. Process Induced Recombination Centres in Neutron Transmutation Doped Silicon and their Influence on High-Voltage Direct-Current Thyristors

      • D. E. Crees, P. D. Taylor
      Pages 181-191

    4. A Study of Float-Zoned NTD Silicon Grown in a Hydrogen Ambient

      • Lu Chuengang, Li Yaoxin, Sun Chengtai, Yin Janhua
      Pages 193-204

    5. Experience with Neutron Transmutation Doped Silicon in the Production of High Power Thyristors

      • Anders Alm, Gerhard Fiedler, Mirka Mikes
      Pages 205-224

  5. Characterization of NTD Material

    1. Transient Current Spectroscopy of Neutron Irradiated Silicon

      • J. W. Farmer, J. C. Nugent
      Pages 225-239

    2. Calibration of the Photoluminescence Technique for Determination of Phosphorus in Silicon by Neutron Transmutation Doping

      • Bobbie D. Stone, Aliene D. Henry, Paul L. Clem Jr., Larry W. Shive, Steve L. Gunn
      Pages 241-250

    3. Swirls in Neutron-Transmutation Doped Float-Zoned Silicon

      • Horst G. Kramer
      Pages 251-260

    4. Compensation Effects in N.T.D. Indium Doped Silicon

      • Bernard Pajot, Armand Tardella
      Pages 261-270
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Keywords

About this book

viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza­ tion of NTD silicon, and the use of NTD silicon for device appli­ cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans­ mutation doping of nonsilicon semiconductors had begun to accel­ erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were pre­ sented on NTD of nonsilicon semiconductors, five papers on irra­ diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indi­ cate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity.

Editors and Affiliations

  • National Bureau of Standards, USA

    Robert D. Larrabee

Bibliographic Information

  • Book Title: Neutron Transmutation Doping of Semiconductor Materials

  • Editors: Robert D. Larrabee

  • DOI: https://doi.org/10.1007/978-1-4613-2695-3

  • Publisher: Springer New York, NY

  • eBook Packages: Springer Book Archive

  • Copyright Information: Plenum Press, New York 1984

  • Softcover ISBN: 978-1-4612-9675-1Published: 21 January 2012

  • eBook ISBN: 978-1-4613-2695-3Published: 11 November 2013

  • Edition Number: 1

  • Number of Pages: XIV, 338

  • Number of Illustrations: 100 b/w illustrations

  • Topics: Semiconductors, Electrical Engineering

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