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Introduction to VLSI Silicon Devices

Physics, Technology and Characterization

  • Book
  • © 1986

Overview

Authors:
  1. Badih El-Kareh

    1. IBM Corporation, USA

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    You can also search for this author in PubMed   Google Scholar

  2. Richard J. Bombard

    1. IBM Corporation, USA

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    You can also search for this author in PubMed   Google Scholar

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Table of contents (6 chapters)

  1. Front Matter

    Pages i-xxi
    Download chapter PDF

  2. Resistances and their Measurements

    • Badih El-Kareh, Richard J. Bombard
    Pages 1-54

  3. PN Junctions

    • Badih El-Kareh, Richard J. Bombard
    Pages 55-141

  4. The Bipolar Transistor

    • Badih El-Kareh, Richard J. Bombard
    Pages 143-285

  5. The MIS CV Technique

    • Badih El-Kareh, Richard J. Bombard
    Pages 287-375

  6. Surface Effects on PN Junctions

    • Badih El-Kareh, Richard J. Bombard
    Pages 377-408

  7. Insulated-Gate-Field-Effect-Transistor (IGFET)

    • Badih El-Kareh, Richard J. Bombard
    Pages 409-557

  8. Back Matter

    Pages 559-569
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Keywords

About this book

There was a long felt need for this book in industrial and academic institutions. It provides new engineers, as well as practicing engineers and advanced laboratory personnel in the field of semiconductors a clear and thorough discussion of state-of-the-art silicon devices, without resorting to the complexity of higher mathematics and physics. This difficult task was made possible by detailing the explanation of equations that describe the device operation and characteristics without endeavoring their full derivation. This is reinforced by several problems which reflect practical cases observed in the laboratory. The problems are given after introducing a major equation or concept. They are arranged in the order of the text rather than in the order of difficulty. The answers to most of the problems are given in order to enable the student to "self-check" the method used for the solutions. The illustrations may prove to be of great help to "newcomers" when dealing with the characterization of real devices and relating the measured data to device physics and process parameters. The new engineer will find the book equivalent to "on the job training" and acquire a working knowledge of the fundamental principles underlying silicon devices. For the engineer with theoretical background, it offers a means for direct application of solid state theory to device analysis and synthesis. The book originated from a set of notes developed for an in-house one-year course in Device Physics, Technology and Characterization at IBM.

Authors and Affiliations

  • IBM Corporation, USA

    Badih El-Kareh, Richard J. Bombard

Bibliographic Information

  • Book Title: Introduction to VLSI Silicon Devices

  • Book Subtitle: Physics, Technology and Characterization

  • Authors: Badih El-Kareh, Richard J. Bombard

  • Series Title: The Springer International Series in Engineering and Computer Science

  • DOI: https://doi.org/10.1007/978-1-4613-2275-7

  • Publisher: Springer New York, NY

  • eBook Packages: Springer Book Archive

  • Copyright Information: Kluwer Academic Publishers 1986

  • Hardcover ISBN: 978-0-89838-210-5Published: 31 December 1985

  • Softcover ISBN: 978-1-4612-9404-7Published: 18 October 2011

  • eBook ISBN: 978-1-4613-2275-7Published: 06 December 2012

  • Series ISSN: 0893-3405

  • Edition Number: 1

  • Number of Pages: XXII, 570

  • Topics: Electrical Engineering

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