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Disordered Semiconductors

  • Book
  • © 1987

Overview

Editors:
  1. Marc A. Kastner

    1. Massachusetts Institute of Technology, Cambridge, USA

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  2. Gordon A. Thomas

    1. AT&T Bell Laboratories, Murray Hill, USA

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    You can also search for this editor in PubMed   Google Scholar

  3. Stanford R. Ovshinsky

    1. Energy Conversion Devices, Inc., Troy, USA

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Part of the book series: Institute for Amorphous Studies Series (IASS)

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Table of contents (77 chapters)

  1. Front Matter

    Pages i-xiv
    Download chapter PDF

  2. Introduction

    1. Introduction

      • Marc A. Kastner, Gordon A. Thomas, Stanford R. Ovshinsky
      Pages 1-2

  3. The Metal-Nonmetal Transition

    1. Impurity Bands in Silicon and Germanium

      • Nevill Mott
      Pages 3-10

    2. Critical Phenomena Near the Metal-Insulator Transition

      • M. Kaveh
      Pages 11-21

    3. The Metal-Insulator Transition at Millikelvin Temperatures

      • Thomas F. Rosenbaum
      Pages 23-28

    4. Magnetic Field Induced Transitions in Disordered Metals

      • G. A. Thomas
      Pages 29-36

    5. Compensation Tuning Study of Metal Insulator Transition in Si:P

      • W. Sasaki, Y. Nishio, K. Kajita
      Pages 37-44

    6. The Metal-Insulator Transition in Compensated Silicon

      • M. J. Hirsch, D. F. Holcomb
      Pages 45-56

    7. The Spectroscopic Investigation of Negatively Charged Donor Ions (D¯ States)

      • R. A. Stradling
      Pages 57-64

    8. Magnetic Properties of Donors and Acceptors in Silicon: Similarities and Differences

      • A. Roy, M. Levy, M. Turner, M. P. Sarachik, L. L. Isaacs
      Pages 65-71

    9. The AC Conductivity in n-Type Silicon Below the Metal-Insulator Transition

      • T. G. Castner, R. J. Deri
      Pages 73-82

    10. Low Frequency Conductivity Anomalies of Strongly Disordered Semiconductors

      • W. Götze
      Pages 83-90

    11. Inelastic Scattering Time of Electrons in Metallic Ge:Sb

      • Youiti Ootuka, Hideyuki Matsuoka, Shun-ichi Kobayashi
      Pages 91-96

    12. Localization Effects in Quasi-One-Dimensional Lithium Quench-Condensed Microstructures

      • D. J. Bishop, G. J. Dolan, J. C. Licini
      Pages 97-105

    13. Potential Disorder in Granular Metals

      • C. J. Adkins
      Pages 107-114

    14. X-ray and Neutron Scattering Studies of Graphite Intercalated with Two-Dimensional K-NH3 Metal-Ammonia Solutions

      • S. A. Solin
      Pages 115-124

    15. Pressure-Induced Effects on Phonons and Gap States in Alloy Semiconductors

      • Shigeru Minomura
      Pages 125-134

    16. The Superconductor-Semiconductor Transition in Cation-Substituted Lithium Titanate, Li[Mx Ti2–x]O4:M = Li+, Al3+ and Cr3+

      • Patrick M. Lambert, Martin R. Harrison, David E. Logan, Peter P. Edwards
      Pages 135-149

  4. Optical and Electronic Phenomena in Amorphous Chalcogenide Semiconductors

    1. Photoinduced and Radiation-Induced Structural Transformations in Vitreous Arsenic Chalcogenides

      • B. T. Kolomiets, V. M. Lyubin
      Pages 151-154

    2. New Aspects of Photoinduced Paramagnetic States in Chalcogenide Glasses

      • S. G. Bishop, U. Strom, J. A. Freitas Jr.
      Pages 155-161
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About this book

Twenty-four years ago, Hellmut Fritzsche came to our laboratory to evaluate our work in amorphous materials. He came many times, sometimes bringing his violin to play with our youngest son, to talk, to help, to discover, and to teach. The times with him were always exciting and rewarding. There was a camaraderie in the early years that has continued and a friendship that has deepened among Iris and me and Hellmut, Sybille and their children. The vision that Hellmut Fritzsche shared with me, the many important contributions he made, the science that he helped so firmly to establish, the courage he showed in the time of our adversity, and the potential that he recognized put all of us in the amorphous field, not only his close friends and collaborators, in his debt. He helped make a science out of intuition, and played an important role not only in the experimental field but also in the basic theoretical aspects. It has been an honor to work with Hellmut through the years.

Editors and Affiliations

  • Massachusetts Institute of Technology, Cambridge, USA

    Marc A. Kastner

  • AT&T Bell Laboratories, Murray Hill, USA

    Gordon A. Thomas

  • Energy Conversion Devices, Inc., Troy, USA

    Stanford R. Ovshinsky

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