Disordered Semiconductors

1. Front Matter

   Pages i-xiv

   PDF

2. Introduction

   1. Introduction

      • Marc A. Kastner, Gordon A. Thomas, Stanford R. Ovshinsky

      Pages 1-2

3. The Metal-Nonmetal Transition

   1. Impurity Bands in Silicon and Germanium

      • Nevill Mott

      Pages 3-10

   2. Critical Phenomena Near the Metal-Insulator Transition

      • M. Kaveh

      Pages 11-21

   3. The Metal-Insulator Transition at Millikelvin Temperatures

      • Thomas F. Rosenbaum

      Pages 23-28

   4. Magnetic Field Induced Transitions in Disordered Metals

      • G. A. Thomas

      Pages 29-36

   5. Compensation Tuning Study of Metal Insulator Transition in Si:P

      • W. Sasaki, Y. Nishio, K. Kajita

      Pages 37-44

   6. The Metal-Insulator Transition in Compensated Silicon

      • M. J. Hirsch, D. F. Holcomb

      Pages 45-56

   7. The Spectroscopic Investigation of Negatively Charged Donor Ions (D¯ States)

      • R. A. Stradling

      Pages 57-64

   8. Magnetic Properties of Donors and Acceptors in Silicon: Similarities and Differences

      • A. Roy, M. Levy, M. Turner, M. P. Sarachik, L. L. Isaacs

      Pages 65-71

   9. The AC Conductivity in n-Type Silicon Below the Metal-Insulator Transition

      • T. G. Castner, R. J. Deri

      Pages 73-82

   10. Low Frequency Conductivity Anomalies of Strongly Disordered Semiconductors

       • W. Götze

       Pages 83-90

   11. Inelastic Scattering Time of Electrons in Metallic Ge:Sb

       • Youiti Ootuka, Hideyuki Matsuoka, Shun-ichi Kobayashi

       Pages 91-96

   12. Localization Effects in Quasi-One-Dimensional Lithium Quench-Condensed Microstructures

       • D. J. Bishop, G. J. Dolan, J. C. Licini

       Pages 97-105

   13. Potential Disorder in Granular Metals

       • C. J. Adkins

       Pages 107-114

   14. X-ray and Neutron Scattering Studies of Graphite Intercalated with Two-Dimensional K-NH3 Metal-Ammonia Solutions

       • S. A. Solin

       Pages 115-124

   15. Pressure-Induced Effects on Phonons and Gap States in Alloy Semiconductors

       • Shigeru Minomura

       Pages 125-134

   16. The Superconductor-Semiconductor Transition in Cation-Substituted Lithium Titanate, Li[Mx Ti2–x]O4:M = Li+, Al3+ and Cr3+

       • Patrick M. Lambert, Martin R. Harrison, David E. Logan, Peter P. Edwards

       Pages 135-149

4. Optical and Electronic Phenomena in Amorphous Chalcogenide Semiconductors

   1. Photoinduced and Radiation-Induced Structural Transformations in Vitreous Arsenic Chalcogenides

      • B. T. Kolomiets, V. M. Lyubin

      Pages 151-154

   2. New Aspects of Photoinduced Paramagnetic States in Chalcogenide Glasses

      • S. G. Bishop, U. Strom, J. A. Freitas Jr.

      Pages 155-161

Twenty-four years ago, Hellmut Fritzsche came to our laboratory to evaluate our work in amorphous materials. He came many times, sometimes bringing his violin to play with our youngest son, to talk, to help, to discover, and to teach. The times with him were always exciting and rewarding. There was a camaraderie in the early years that has continued and a friendship that has deepened among Iris and me and Hellmut, Sybille and their children. The vision that Hellmut Fritzsche shared with me, the many important contributions he made, the science that he helped so firmly to establish, the courage he showed in the time of our adversity, and the potential that he recognized put all of us in the amorphous field, not only his close friends and collaborators, in his debt. He helped make a science out of intuition, and played an important role not only in the experimental field but also in the basic theoretical aspects. It has been an honor to work with Hellmut through the years.

• Doping
• ESR
• Energie
• Germanium
• Graphit
• Modulation
• Potential
• Semiconductor
• Standard
• Superconductor
• electrons
• laser
• model
• solar cell
• thin film

• Massachusetts Institute of Technology, Cambridge, USA

  Marc A. Kastner

• AT&T Bell Laboratories, Murray Hill, USA

  Gordon A. Thomas

• Energy Conversion Devices, Inc., Troy, USA

  Stanford R. Ovshinsky

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