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Table of contents (39 chapters)
Keywords
About this book
Research on electronic transport in ultra small dimensions has been highly stimulated by the sensational developments in silicon technology and very large scale integration. The papers in this volume, however, have been influenced to no lesser extent by the advent of molecular beam epitaxy and metal/organic chemical vapor deposition which has made possible the control of semiconductor boundaries on a quantum level. This new control of boundary condi tions in ultra small electronic research is the mathematical reason for a whole set of innovative ideas. For the first time in the history of semiconductors, it is possible to design device functions from physical considerations involving ~ngstom scale dimensions. At the time the meeting was held, July 1982, it was one of the first strong signals of the powerful developments in this area. During the meeting, important questions have been answered concerning ballistic transport, Monte Carlo simulations of high field transport and other developments pertinent to new device concepts and the understanding of small devices from physics to function. The committee members want to express their deep appreciation to the speakers who have made the meeting a success. The USER pro ject of DOD has been a vital stimulous and thanks go to the Army Research Office and the Office of Naval Research for financial sup port. Urbana, January 1984 K. Hess, Conference Chairman J. R. Brews L. R. Cooper, Ex Officio D. K. Ferry H. L. Grubin G. J. Iafrate M. I. Nathan A. F.
Editors and Affiliations
Bibliographic Information
Book Title: The Physics of Submicron Structures
Editors: H. L. Grubin, K. Hess, G. J. Iafrate, D. K. Ferry
DOI: https://doi.org/10.1007/978-1-4613-2777-6
Publisher: Springer New York, NY
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eBook Packages: Springer Book Archive
Copyright Information: Plenum Press, New York 1984
Softcover ISBN: 978-1-4612-9714-7Published: 02 October 2011
eBook ISBN: 978-1-4613-2777-6Published: 06 December 2012
Edition Number: 1
Number of Pages: X, 360