Polycrystalline Silicon for Integrated Circuit Applications

1. Front Matter

   Pages i-xiii

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2. Deposition

   • Ted Kamins

   Pages 1-40

3. Structure

   • Ted Kamins

   Pages 41-89

4. Dopant Diffusion and Segregation

   • Ted Kamins

   Pages 91-123

5. Oxidation

   • Ted Kamins

   Pages 125-154

6. Electrical Properties

   • Ted Kamins

   Pages 155-202

7. Applications

   • Ted Kamins

   Pages 203-248

8. Back Matter

   Pages 249-290

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Recent years have seen silicon integrated circuits enter into an increasing number of technical and consumer applications, until they now affect everyday life, as well as technical areas. Polycrystalline silicon has been an important component of silicon technology for nearly two decades, being used first in MOS integrated circuits and now becoming pervasive in bipolar circuits, as well. During this time a great deal of informa­ tion has been published about polysilicon. A wide range of deposition conditions has been used to form films exhibiting markedly different properties. Seemingly contradictory results can often be explained by considering the details of the structure formed. This monograph is an attempt to synthesize much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon so that it can be used most effectively to enhance device and integrated-circuit perfor­ mance. As device performance improves, however, some of the proper­ ties of polysilicon are beginning to restrict the overall performance of integrated circuits, and the basic limitations of the properties of polysili­ con also need to be better understood to minimize potential degradation of circuit behavior.

• Phase
• Potential
• Sensor
• integrated circuit
• interconnect
• model
• thermodynamics
• transistor

• Hewlett-Packard, USA

  Ted Kamins

• Stanford University, USA

  Ted Kamins

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