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Metallization and Metal-Semiconductor Interfaces

  • Book
  • © 1989

Overview

Editors:
  1. Inder P. Batra

    1. IBM Almaden Research Center, San Jose, USA

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Part of the book series: NATO Science Series B: (NSSB, volume 195)

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Table of contents (31 chapters)

  1. Front Matter

    Pages i-xi
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  2. Introduction to Metallization and Metal-Semiconductor Interfaces

    1. Introduction to Metallization and Metal-Semiconductor Interfaces

      • Inder P. Batra
      Pages 1-7

  3. General Schottky Barrier Mechanisms

    1. Front Matter

      Pages 9-9
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    2. Mechanisms of Barrier Formation in Schottky Contacts

      • Winfried Mönch
      Pages 11-38

    3. The Role of Defects and Metal States at the Metal-Semiconductor Interface

      • R. Ludeke
      Pages 39-54

    4. Metallization, Bonding, and Energetics of Ordered Phases of Al on Si(111)

      • J. S. Nelson, Inder P. Batra
      Pages 55-74

  5. Temperature Dependent Metallization Studies

    1. Front Matter

      Pages 137-137
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    2. Disruption, Metallization, and Electrical Properties of Metal GaAs and InP Semiconductor Interfaces

      • W. E. Spicer, R. Cao, K. Miyano, C. McCants, T. T. Chiang, C. J. Spindt et al.
      Pages 139-161

    3. Metal-GaAs(110) Interfaces Formed at Low Temperature: From Adsorbate- to Metal-Induced Gap States

      • A. Kahn, K. Stiles, D. Mao, S. F. Horng, K. Young, J. McKinley et al.
      Pages 163-178

    4. Thermal Effects in Silicon-Metal Interface Formation: A Photoemission Study of Si/Gd and Si/Yb

      • L. Braicovich, E. Puppin
      Pages 179-192

  7. Band Offsets and Barriers

    1. Front Matter

      Pages 257-257
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Keywords

About this book

This book represents the work presented at a NATO Advanced Research Workshop on "Metallization and Metal-Semiconductor Interfaces", held at the Technical University of Munich, Garching, W. Germany from 22-26 August 1988. The major focus of the workshop was to evaluate critically the progress made in the area of metal-semiconductor interfaces. The underlying theme was the mechanism of Schottky barrier formation and a serious as­ sessment of the various models. A significant fraction of the workshop time was also spent in discussing the interaction of alkali metals with semiconductors. Alkali metals on semi­ conductors form ordered overlayers and the resulting system often exhibits one-dimensional metallic properties. The nature of their interaction has introduced new and exciting com­ plexities and this was pursued at length during the lively discussions at the workshop. A half a day was devoted to Scanning Tunneling Microscopy, the emphasis being on its utility in providing structural and electronic character of low-coverage regime. The book should pro­ vide readers with the most current status of the research activity in the general area of metal-semiconductor interfaces at an international level. It should also serve as an excellent introduction to the field, since sufficient review type of material has also been included The workshop organizers, Dr. I. P. Batra (Director), mM Almaden Research Center, San Jose, Prof. S. Ciraci, Bilkent University, Ankara, Prof. C. Y. Pong, University of California, Davis, Prof. Dr. F. Koch (Local Chairman), Technical University Munich, Garching, Dr. H.

Editors and Affiliations

  • IBM Almaden Research Center, San Jose, USA

    Inder P. Batra

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