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Semiconductor Device Modelling

  • Book
  • © 1989

Overview

Editors:
  1. Christopher M. Snowden

    1. Department of Electrical and Electronic Engineering, University of Leeds, Leeds, UK

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Table of contents (15 chapters)

  1. Front Matter

    Pages i-viii
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  2. Review of Semiconductor Device Physics

    • Robert E. Miles
    Pages 1-15

  3. Classical and Semiclassical Models

    • Christopher M. Snowden
    Pages 16-33

  4. Numerical Techniques Finite Difference and Boundary Element Methods

    • Derek B. Ingham
    Pages 34-48

  5. Numerical Techniques — The Finite Element Method

    • Stephen D. Mobbs
    Pages 49-59

  6. Gallium Arsenide versus Silicon — Applications and Modelling

    • Michael Shur
    Pages 60-69

  7. Physical Models for Silicon VLSI

    • Siegfried Selberherr
    Pages 70-88

  8. Physical Models for Compound Semiconductor Devices

    • Michael Shur
    Pages 89-108

  9. Modelling of Semiconductor Laser Diodes

    • Roel Baets
    Pages 109-127

  10. Equivalent Circuit Models for Silicon Devices

    • Margaret E. Clarke
    Pages 128-142

  11. High Frequency Equivalent Circuit Models

    • Michael J. Howes
    Pages 143-160

  12. Modelling of Noise Processes

    • Alain Cappy
    Pages 161-180

  13. Monte Carlo Modelling Techniques

    • Mustafa Al-Mudares
    Pages 181-206

  14. Quantum Transport Modelling

    • John R. Barker
    Pages 207-226

  15. Computer Simulations

    • Trevor M. Barton
    Pages 227-247

  16. Practical Aspects of Device Modelling

    • Joseph A. Barnard
    Pages 248-254

  17. Back Matter

    Pages 255-259
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Keywords

About this book

Semiconductor device modelling has developed in recent years from being solely the domain of device physicists to span broader technological disciplines involved in device and electronic circuit design and develop­ ment. The rapid emergence of very high speed, high density integrated circuit technology and the drive towards high speed communications has meant that extremely small-scale device structures are used in contempor­ ary designs. The characterisation and analysis of these devices can no longer be satisfied by electrical measurements alone. Traditional equivalent circuit models and closed-form analytical models cannot always provide consis­ tently accurate results for all modes of operation of these very small devices. Furthermore, the highly competitive nature of the semiconductor industry has led to the need to minimise development costs and lead-time associated with introducing new designs. This has meant that there has been a greater demand for models capable of increasing our understanding of how these devices operate and capable of predicting accurate quantitative results. The desire to move towards computer aided design and expert systems has reinforced the need for models capable of representing device operation under DC, small-signal, large-signal and high frequency operation. It is also desirable to relate the physical structure of the device to the electrical performance. This demand for better models has led to the introduction of improved equivalent circuit models and a upsurge in interest in using physical models.

Editors and Affiliations

  • Department of Electrical and Electronic Engineering, University of Leeds, Leeds, UK

    Christopher M. Snowden

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