Authors:
- Provides industry relevant applications for strained CMOS technology
- Discusses range of applications from planar (2D) to nano-wire (1D) devices
- Treats strain physics at both qualitative overview level as well as detailed fundamental physics
- Explains strain physics relevant to logic devices as well as strain-based MEMS
- Sensors and strain in optoelectronic devices
- Includes supplementary material: sn.pub/extras
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Table of contents (9 chapters)
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Front Matter
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Band Structures of Strained Semiconductors
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Front Matter
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Transport Theory of Strained Semiconductors
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Front Matter
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Strain in Semiconductor Devices
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Front Matter
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Back Matter
About this book
Authors and Affiliations
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Dept. Electrical & Computer Engineering, University of Florida, Gainesville, U.S.A.
Yongke Sun, Scott E. Thompson
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Dept. Electrical &, University of Florida, Gainesville, U.S.A.
Toshikazu Nishida
Bibliographic Information
Book Title: Strain Effect in Semiconductors
Book Subtitle: Theory and Device Applications
Authors: Yongke Sun, Scott E. Thompson, Toshikazu Nishida
DOI: https://doi.org/10.1007/978-1-4419-0552-9
Publisher: Springer New York, NY
eBook Packages: Engineering, Engineering (R0)
Copyright Information: Springer-Verlag US 2010
Hardcover ISBN: 978-1-4419-0551-2Published: 04 December 2009
Softcover ISBN: 978-1-4899-8315-2Published: 20 November 2014
eBook ISBN: 978-1-4419-0552-9Published: 14 November 2009
Edition Number: 1
Number of Pages: XII, 350
Topics: Electronics and Microelectronics, Instrumentation, Condensed Matter Physics, Solid State Physics, Spectroscopy and Microscopy, Optical and Electronic Materials