Nanoscaled Semiconductor-on-Insulator Structures and Devices

1. Front Matter

   Pages i-xiii

   PDF

2. Nanoscaled SOI Material and Device Technologies

   1. Front Matter

      Pages 2-2

      PDF

   2. Status and trends in SOI nanodevices

      • Francis Balestra

      Pages 3-18

   3. Non-Planar Devices for Nanoscale CMOS

      • Max C. Lemme, H. D. B. Gottlob, Heinrich Kurz

      Pages 19-32

   4. High-κ Dielectric Stacks for Nanoscaled SOI Devices

      • Steve Hall, O. Buiu, I. Z. Mitrovic, Y. Lu, W. M. Davey

      Pages 33-58

   5. Nanoscaled Semiconductor Heterostructures for CMOS Transistors Formed by Ion Implantation and Hydrogen Transfer

      • Vladimir Popov, Ida Tyschenko, Alexander Cherkov, Matthias Voelskow

      Pages 59-72

   6. Fluorine –Vacancy Engineering: A Viable Solution for Dopant Diffusion Suppression in SOI Substrates

      • Huda Abdel Wahab El Mubarek, Peter Ashburn

      Pages 73-87

   7. Suspended Silicon-On-Insulator Nanowires for the Fabrication of Quadruple Gate MOSFETs

      • Vikram Passi, Benoit Olbrechts, Jean-Pierre Raskin, Jens Bolten, Thomas Mollenhauer, Thorsten Wahlbrink et al.

      Pages 89-94

3. Physics of Novel Nanoscaled SemOI Devices

   1. Front Matter

      Pages 96-96

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   2. Integration of silicon Single-Electron Transistors Operating at Room Temperature

      • Toshiro Hiramoto

      Pages 97-112

   3. SiGe Nanodots in Electro-Optical SOI Devices

      • Anatoly V. Dvurechenskii, A. I. Yakimov, N. P. Stepina, V. V. Kirienko, P. L. Novikov

      Pages 113-128

   4. Nanowire Quantum Effects in Trigate SOI MOSFETs

      • Jean-Pierre Colinge

      Pages 129-142

   5. Semiconductor Nanostructures and Devices

      • Joachim Knoch, Hans Lüth

      Pages 143-158

   6. MuGFET CMOS Process with Midgap Gate Material

      • W. Xiong, C. R. Cleavelin, T. Schulz, K. Schrüfer, P. Patruno, Jean-Pierre Colinge

      Pages 159-164

   7. Doping Fluctuation Effects in Multiple-Gate SOI MOSFETs

      • C. A. Colinge, W. Xiong, C. R. Cleavelin, Jean-Pierre Colinge

      Pages 165-170

   8. SiGeC HBTs: impact of C on Device Performance

      • I. Z. Mitrovic, Huda Abdel Wahab El Mubarek, O. Buiu, Steve Hall, Peter Ashburn, J. Zhang

      Pages 171-178

4. Reliability and Characterization of Nanoscaled SOI Devices

   1. Front Matter

      Pages 180-180

      PDF

   2. Noise Research of Nanoscaled SOI Devices

      • N. Lukyanchikova

      Pages 181-198

   3. Electrical Characterization and Special Properties of FINFET Structures

      • T. Rudenko, Valeria Kilchytska, N. Collaert, Alexei N. Nazarov, M. Jurczak, Denis Flandre

      Pages 199-220

   4. Substrate Effect on the Output Conductance Frequency Response of SOI MOSFETs

      • Valeria Kilchytska, David Levacq, Dimitri Lederer, Guillaume Pailloncy, Jean-Pierre Raskin, Denis Flandre

      Pages 221-238

This proceedings volume constitutes an archive of the contributions of the key-speakers who attended the NATO Advanced Research Workshop on “Nanoscaled Semiconductor-On-Insulator Structures and devices” held in the Tourist and Recreation Centre “Sudak” (Crimea, Ukraine) from 15 to 19 October 2006. The semiconductor industry has sustained a very rapid growth during the last three decades through impressive technological developments which have resulted in products with higher performance and lower cost per function. After many years of development it is now confidently predicted that semiconductor-on-insulator materials will enter and increasingly be used by manufacturing industry. The wider use of semiconductor (es- cially silicon) on insulator materials will not only enable the benefits of these materials to be demonstrated but, also, will drive down the cost of substrates which, in turn, will stimulate the development of other novel devices and applications. Thus the semiconductor-on-insulator materials of today are not only the basis for modern microelectronics but also for future nanoscale devices and ICs. In itself this trend will encourage the promotion of the skills and ideas generated by researchers in the Former Soviet Union and Eastern Europe. Indeed, one of the goals of this Workshop is to promote the development of SOI technologies worldwide.

• Anode
• CMOS
• FinFET
• IC
• MOSFET
• Nanotube
• Potential
• Transistor
• electronics
• heterojunction bipolar transistor
• integrated circuit
• metal oxide semiconductur field-effect transistor
• modeling
• quantum dot
• simulation

• University of Liverpool, Brownlow Hill, UK

  Steve Hall

• National Academy of Sciences of Ukraine, Ukraine

  Alexei N. Nazarov, Vladimir S. Lysenko

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