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  • Conference proceedings
  • © 2004

Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices

Part of the book series: NATO Science Series II: Mathematics, Physics and Chemistry (NAII, volume 151)

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Table of contents (41 papers)

  1. Front Matter

    Pages I-IX
  2. Noise Sources

    1. 1/f Noise Sources

      • F.N. Hooge
      Pages 3-10
    2. Quantum Phase Locking, 1/f Noise and Entanglement

      • M. Planat, H. Rosu
      Pages 37-44
    3. Shot Noise in Mesoscopic Devices and Quantum Dot Networks

      • M. Macucci, P. Marconcini, G. Iannaccone, M. Gattobigio, G. Basso, B. Pellegrini
      Pages 45-52
    4. Super-Poissonian Noise in Nanostructures

      • Ya. M. Blanter
      Pages 53-60
  3. Noise in Nanoscale Devices

    1. Noise in Optoelectronic Devices

      • R. Alabedra
      Pages 71-78
    2. 1/f Noise in MOSTs: Faster is Noisier

      • L.K.J. Vandamme
      Pages 109-120
    3. Noise and Tunneling Through the 2.5 nm Gate Oxide in Soi MOSFETs

      • N. Lukyanchikova, E. Simoen, A. Mercha, C. Claeys
      Pages 129-136
    4. Low Frequency Noise Studies of Si Nano-Crystal Effects in MOS Transistors and Capacitors

      • S. Ferraton, L. Montès, I. Ionica, J. Zimmermann, J. A. Chroboczek
      Pages 137-144
    5. Noise Modelling in Low Dimensional Electronic Structures

      • L. Reggiani, V. Ya Aleshkin, A. Reklaitis
      Pages 145-152
    6. Tunneling Effects and Low Frequency Noise of GaN/GaAlN HFETs

      • M. Levinshtein, S. Rumyantsev, M. S. Shur
      Pages 161-168

About this book

A discussion of recently developed experimental methods for noise research in nanoscale electronic devices, conducted by specialists in transport and stochastic phenomena in nanoscale physics. The approach described is to create methods for experimental observations of noise sources, their localization and their frequency spectrum, voltage-current and thermal dependences. Our current knowledge of measurement methods for mesoscopic devices is summarized to identify directions for future research, related to downscaling effects.

The directions for future research into fluctuation phenomena in quantum dot and quantum wire devices are specified. Nanoscale electronic devices will be the basic components for electronics of the 21st century. From this point of view the signal-to-noise ratio is a very important parameter for the device application. Since the noise is also a quality and reliability indicator, experimental methods will have a wide application in the future.

Editors and Affiliations

  • Brno University of Technology, Brno, Czech Republic

    Josef Sikula

  • Ioffe Institute of Russian Academy of Sciences, St. Petersburg, Russia

    Michael Levinshtein

Bibliographic Information

Buy it now

Buying options

eBook USD 259.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book USD 329.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book USD 329.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Other ways to access