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Embedded Memories for Nano-Scale VLSIs

  • Book
  • © 2009

Overview

Editors:
  1. Kevin Zhang
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  • Provides a comprehensive and in-depth view on the state-of-the-art embedded memory technologies
  • Gives an overview on the landscape and trend of embedded memory in various VLSI system designs, including high-performance microprocessor, low-power mobile handheld devices, micro-controllers, and various consumer electronics
  • Shows an in-depth view on each different type of embedded memory technology, including high-speed SRAM, ultra-low-voltage and alternative SRAM, embedded DRAM, embedded nonvolatile memory, and emerging or so-called “universal” memories such as FeRAM, MRAM, and PRAM
  • Covers all the key technology attributes from a product application perspective, ranging from technology scaling challenges to advanced circuit techniques for achieving optimal design tradeoff in performance and power
  • Includes supplementary material: sn.pub/extras

Part of the book series: Integrated Circuits and Systems (ICIR)

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Table of contents (9 chapters)

  1. Front Matter

    Pages i-vii
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  2. Introduction

    • Kevin Zhang
    Pages 1-5

  3. Embedded Memory Architecture for Low-Power Application Processor

    • Hoi Jun Yoo, Donghyun Kim
    Pages 7-38

  4. Embedded SRAM Design in Nanometer-Scale Technologies

    • Hiroyuki Yamauchi
    Pages 39-88

  5. Ultra Low Voltage SRAM Design

    • Naveen Verma, Anantha P. Chandrakasan
    Pages 89-126

  6. Embedded DRAM in Nano-scale Technologies

    • John Barth
    Pages 127-175

  7. Embedded Flash Memory

    • Hideto Hidaka
    Pages 177-240

  8. Embedded Magnetic RAM

    • Hideto Hidaka
    Pages 241-277

  9. FeRAM

    • Shoichiro Kawashima, Jeffrey S. Cross
    Pages 279-328

  10. Statistical Blockade: Estimating Rare Event Statistics for Memories

    • Amith Singhee, Rob A. Rutenbar
    Pages 329-382

  11. Back Matter

    Pages 383-386
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About this book

Kevin Zhang Advancement of semiconductor technology has driven the rapid growth of very large scale integrated (VLSI) systems for increasingly broad applications, incl- ing high-end and mobile computing, consumer electronics such as 3D gaming, multi-function or smart phone, and various set-top players and ubiquitous sensor and medical devices. To meet the increasing demand for higher performance and lower power consumption in many different system applications, it is often required to have a large amount of on-die or embedded memory to support the need of data bandwidth in a system. The varieties of embedded memory in a given system have alsobecome increasingly more complex, ranging fromstatictodynamic and volatile to nonvolatile. Among embedded memories, six-transistor (6T)-based static random access memory (SRAM) continues to play a pivotal role in nearly all VLSI systems due to its superior speed and full compatibility with logic process technology. But as the technology scaling continues, SRAM design is facing severe challenge in mainta- ing suf?cient cell stability margin under relentless area scaling. Meanwhile, rapid expansion in mobile application, including new emerging application in sensor and medical devices, requires far more aggressive voltage scaling to meet very str- gent power constraint. Many innovative circuit topologies and techniques have been extensively explored in recent years to address these challenges.

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