Skip to main content

FinFETs and Other Multi-Gate Transistors

  • Book
  • © 2008

Overview

  • Explains the physics and properties of MuGFET devices, how they are made and how circuit designers can use them to improve the performances of integrated circuits
  • Covers the emergence of quantum effects and novel electrical transport phenomena due to the reduced size of the devices
  • Describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs
  • Presents descriptions of the technological challenges and options, including a physically based compact model

Part of the book series: Integrated Circuits and Systems (ICIR)

This is a preview of subscription content, log in via an institution to check access.

Access this book

eBook USD 169.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book USD 219.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book USD 219.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Other ways to access

Licence this eBook for your library

Institutional subscriptions

Table of contents (7 chapters)

Keywords

About this book

FinFETs and Other Multi-Gate Transistors provides a comprehensive description of the physics, technology and circuit applications of multigate field-effect transistors (FETs). It explains the physics and properties of these devices, how they are fabricated and how circuit designers can use them to improve the performances of integrated circuits.

The International Technology Roadmap for Semiconductors (ITRS) recognizes the importance of these devices and places them in the "Advanced non-classical CMOS devices" category. Of all the existing multigate devices, the FinFET is the most widely known.

FinFETs and Other Multi-Gate Transistors is dedicated to the different facets of multigate FET technology and is written by leading experts in the field.

Editors and Affiliations

  • University of California, Davis, USA

    Jean-Pierre Colinge

Bibliographic Information

Publish with us