Skip to main content
Book cover

Ti-Sb-Te Phase Change Materials: Component Optimisation, Mechanism and Applications

  • Book
  • © 2017

Overview

  • Nominated as an outstanding thesis by the University of Chinese Academy of Sciences
  • Proposes a novel Ti-Sb-Te alloy for high-speed and low-power phase change memory
  • Covers both the mechanism and component optimizations of the Ti-Sb-Te alloy, as well as its applications in phase-change memory chips
  • Includes supplementary material: sn.pub/extras

Part of the book series: Springer Theses (Springer Theses)

This is a preview of subscription content, log in via an institution to check access.

Access this book

eBook USD 84.99
Price excludes VAT (USA)
  • Available as EPUB and PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book USD 109.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book USD 109.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Other ways to access

Licence this eBook for your library

Institutional subscriptions

Table of contents (8 chapters)

Keywords

About this book

This book introduces a novel Ti-Sb-Te alloy for high-speed and low-power phase-change memory applications, which demonstrates a phase-change mechanism that differs significantly from that of conventional Ge2Sb2Te5 and yields favorable overall performance. Systematic methods, combined with better material characteristics, are used to optimize the material components and device performance. Subsequently, a phase-change memory chip based on the optimized component is successfully fabricated using 40-nm complementary metal-oxide semiconductor technology, which offers a number of advantages in many embedded applications.

Authors and Affiliations

  • Shanghai Institute of Microsystem and InInformation Technology, Chinese Academy of Sciences Shanghai Institute of Microsystem and In, Shanghai, China

    Min Zhu

About the author

Min Zhu received his B.Sc. in Electronics Science and Technology from Hubei University, China in 2009, and completed his Ph.D. in Microelectronics and Solid-State Electronics at Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences in 2014. His major research project in Prof. Zhitang Song’s group concerned a Ti-Sb-Te alloy for high-speed and low-power phase change memory. Subsequently, he received an Alexander von Humboldt Research Fellowship and became a post-doctoral fellow working with Prof. Matthias Wuttig at RWTH Aachen University, investigating the crystallization behavior of phase change materials.

Bibliographic Information

Publish with us