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CMOS RF Circuit Design for Reliability and Variability

  • Book
  • © 2016

Overview

Authors:
  1. Jiann-Shiun Yuan

    1. Electrical Engineering and Comp Sci, University of Central Florida, Orlando, USA

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  • First book to address the effect of device reliability and process variations on the RF circuit performance degradations
  • Present of all kinds RF circuits in the reliability examination
  • Includes analytical equations, experimental data and simulation results
  • Includes supplementary material: sn.pub/extras

Part of the book series: SpringerBriefs in Applied Sciences and Technology (BRIEFSAPPLSCIENCES)

Part of the book sub series: SpringerBriefs in Reliability (SBR)

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Table of contents (10 chapters)

  1. Front Matter

    Pages i-vi
    Download chapter PDF

  2. Introduction

    • Jiann-Shiun Yuan
    Pages 1-2

  3. CMOS Transistor Reliability and Variability Mechanisms

    • Jiann-Shiun Yuan
    Pages 3-9

  4. Low-Noise Amplifier Reliability

    • Jiann-Shiun Yuan
    Pages 11-18

  5. Power Amplifier Reliability

    • Jiann-Shiun Yuan
    Pages 19-31

  6. Voltage-Controlled Oscillator Reliability

    • Jiann-Shiun Yuan
    Pages 33-48

  7. Mixer Reliability

    • Jiann-Shiun Yuan
    Pages 49-53

  8. LNA Design for Variability

    • Jiann-Shiun Yuan
    Pages 55-69

  9. Power Amplifier Design for Variability

    • Jiann-Shiun Yuan
    Pages 71-88

  10. Oscillator Design for Variability

    • Jiann-Shiun Yuan
    Pages 89-97

  11. Mixer Design for Variability

    • Jiann-Shiun Yuan
    Pages 99-106
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Keywords

About this book

The subject of this book is CMOS RF circuit design for reliability. The device reliability and process variation issues on RF transmitter and receiver circuits will be particular interest to the readers in the field of semiconductor devices and circuits. This proposed book is unique to explore typical reliability issues in the device and technology level and then to examine their impact on RF wireless transceiver circuit performance. Analytical equations, experimental data, device and circuit simulation results will be given for clear explanation. The main benefit the reader derive from this book will be clear understanding on how device reliability issues affects the RF circuit performance subjected to operation aging and process variations.

Authors and Affiliations

  • Electrical Engineering and Comp Sci, University of Central Florida, Orlando, USA

    Jiann-Shiun Yuan

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