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Photo-Excited Charge Collection Spectroscopy

Probing the traps in field-effect transistors

  • New and easy method to quantitatively measure the trap density of state in FETs as a measure of device instability are included
  • New and easy method to characterize the electronic structure of organic semiconductor are described
  • Method to measure the interface traps of nanostructure FETs included in the book

Part of the book series: SpringerBriefs in Physics (SpringerBriefs in Physics)

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Table of contents (6 chapters)

  1. Front Matter

    Pages i-xi
  2. Device Stability and Photo-Excited Charge-Collection Spectroscopy

    • Seongil Im, Youn-Gyoung Chang, Jae Kim
    Pages 1-16
  3. Instrumentations for PECCS

    • Seongil Im, Youn-Gyoung Chang, Jae Kim
    Pages 17-29
  4. PECCS Measurements in Organic FETs

    • Seongil Im, Youn-Gyoung Chang, Jae Kim
    Pages 31-58
  5. PECCS Measurements in Oxide FETs

    • Seongil Im, Youn-Gyoung Chang, Jae Kim
    Pages 59-81
  6. PECCS Measurements in Nanostructure FETs

    • Seongil Im, Youn-Gyoung Chang, Jae Kim
    Pages 83-97
  7. Summary and Limiting Factors of PECCS

    • Seongil Im, Youn-Gyoung Chang, Jae Kim
    Pages 99-100
  8. Back Matter

    Pages 101-101

About this book

Solid state field-effect devices such as organic and inorganic-channel thin-film transistors (TFTs) have been expected to promote advances in display and sensor electronics. The operational stabilities of such TFTs are thus important, strongly depending on the nature and density of charge traps present at the channel/dielectric interface or in the thin-film channel itself.

This book contains how to characterize these traps, starting from the device physics of field-effect transistor (FET). Unlike conventional analysis techniques which are away from well-resolving spectral results, newly-introduced photo-excited charge-collection spectroscopy (PECCS) utilizes the photo-induced threshold voltage response from any type of working transistor devices with organic-, inorganic-, and even nano-channels, directly probing on the traps. So, our technique PECCS has been discussed through more than ten refereed-journal papers in the fields of device electronics, applied physics, applied chemistry, nano-devices and materials science, finally finding a need to be summarized with several chapters in a short book. Device physics and instrumentations of PECCS are well addressed respectively, in the first and second chapters, for the next chapters addressing real applications to organic, oxide, and nanostructured FETs. This book would provide benefits since its contents are not only educational and basic principle-supportive but also applicable and in-house operational.

Authors and Affiliations

  • Institute of Physics and Applied Physics, Physics, Yonsei University, Seoul, Korea, Republic of (South Korea)

    Seongil Im

  • , Physics, Yonsei University, Seoul, Korea, Republic of (South Korea)

    Youn-Gyoung Chang, Jae Hoon Kim

About the authors

Seongil Im, applied physicist earned his Ph.D from Univ. of California at Berkeley at the dept. of MSE in 1994 and worked as a research fellow at the dept. of Applied Physics and Electrical Engineering in CALTECH from 1995 till 1996. He joined the dept. of MSE at Yonsei Univ. as an assistant professor in 1997. Currently he is a professor at Physics department. His research expertise is device physics and detailed research subjects are Oxide and Organic Thin-Film Electronics, Nanowire and Nanosheet FETs, and Photon-probe characterizations for device stabilities. He has published over ~200 peer-review journal papers including many of Applied Physics Letters, Advanced Materials, Nano Letters, Journal of Materials Chemistry, and IEEE Electron Device Letters, etc. He is the recipient of year 2012 Yonsei University Academic Award and has worked as a referee of many journal papers of Wiely, AIP, ACS, and IEEE publishers. More than 20 invited talks in international symposiums he has given.

 

Youn-Gyoung Chang, senior research engineer at LG Display R&D center from 1998 till now, received her MS degree of Materials Science and Engineering at Gwangju Institute Science in 1998 after BS of Physics at Ewha Womans Univ. in 1995. Since she joined LG Display, her career covers low temperature a-Si TFT development and driver panel design, LCD integration-process, printable TFTs-related back plane, and the instability analysis of oxide TFTs. She has published several journal papers sucha as IEEE Electron Device Letters, working as a part time Ph.D student at the department of physics, Yonsei University, Seoul, Korea.

Bibliographic Information

Buy it now

Buying options

eBook USD 39.99
Price excludes VAT (USA)
  • Available as EPUB and PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book USD 49.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Other ways to access