Springer Series in Advanced Microelectronics

High Mobility and Quantum Well Transistors

Design and TCAD Simulation

Authors: Hellings, Geert, De Meyer, Kristin

  • A comprehensive explanation of Quantum Well-based transistors and their electrical behaviour
  • A consistent set of TCAD models and parameters allows simulating the fabrication process and the electrical behaviour of a Germanium pFET technology
  • An in-depth discussion about the fabrication and electrical characterization of Implant-Free Quantum Well (IFQW) transistor technology
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About this book

For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials.

High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET – is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained-silicon technology. High mobility channels, providing high drive current, and heterostructure confinement, providing good short-channel control, make a promising combination for future technology nodes.

About the authors

Geert Hellings received the B.S. and M.S. degrees in Electrical Engineering from the KU Leuven, Belgium, in 2007. His master thesis was on III-nitride-based UV detectors for space applications. He obtained the PhD degree from the Electrical Engineering Department (ESAT), Integrated Systems Division (INSYS) at the University of Leuven, Belgium. During his PhD, he worked on the integration of high-mobility channel materials for digital logic applications at imec, Leuven, Belgium. He received a Ph.D. grant from the Institute for the Promotion of Innovation through Science and Technology in Flanders (IWT-Vlaanderen), Brussels, Belgium. He won the 2008 IEEE Region 8 Student Paper Contest and received the 2011 imec Scientific Excellence Award. He has authored or co-authored approximately 70 technical papers for publication in journals and presentations at conferences and holds various patents.

 

Kristin De Meyer M.Sc. (1974), PhD (1979) KULeuven. She was holder of an IBM World Trade Postdoctoral Fellowship at the IBM T. J. Watson Research Center, Yorktown Heights, NY. Currently she is the Director of Doctoral Research in imec. Since October 1986, she has also been a Part-Time Professor with ESAT-INSYS, KUL. She was the Coordinator for IMEC in several EEC projects.  Dr. De Meyer is an IIEE fellow ,member of the Belgian Federal Council for Science Policy and (co) author of over 500 publications.

Table of contents (7 chapters)

  • Introduction

    Hellings, Geert (et al.)

    Pages 1-5

  • Source/Drain Junctions in Germanium: Experimental Investigation

    Hellings, Geert (et al.)

    Pages 7-26

  • TCAD Simulation and Modeling of Ion Implants in Germanium

    Hellings, Geert (et al.)

    Pages 27-47

  • Electrical TCAD Simulations and Modeling in Germanium

    Hellings, Geert (et al.)

    Pages 49-73

  • Investigation of Quantum Well Transistors for Scaled Technologies

    Hellings, Geert (et al.)

    Pages 75-103

Buy this book

eBook $119.00
price for USA (gross)
  • ISBN 978-94-007-6340-1
  • Digitally watermarked, DRM-free
  • Included format: PDF, EPUB
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Hardcover $159.00
price for USA
  • ISBN 978-94-007-6339-5
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
Softcover $159.00
price for USA
  • ISBN 978-94-007-9569-3
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
Rent the ebook  
  • Rental duration: 1 or 6 month
  • low-cost access
  • online reader with highlighting and note-making option
  • can be used across all devices
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Bibliographic Information

Bibliographic Information
Book Title
High Mobility and Quantum Well Transistors
Book Subtitle
Design and TCAD Simulation
Authors
Series Title
Springer Series in Advanced Microelectronics
Series Volume
42
Copyright
2013
Publisher
Springer Netherlands
Copyright Holder
Springer Science+Business Media Dordrecht
eBook ISBN
978-94-007-6340-1
DOI
10.1007/978-94-007-6340-1
Hardcover ISBN
978-94-007-6339-5
Softcover ISBN
978-94-007-9569-3
Series ISSN
1437-0387
Edition Number
1
Number of Pages
XVIII, 140
Topics