Topics in Applied Physics

Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications

Editors: O'Donnell, Kevin Peter, Dierolf, Volkmar (Eds.)

  • Provides a snapshot of the field at a critical point in its development
  • Summarises recent progress in the science and technology of rare-earth doped nitrides
  • First book on rare-earth doped III-Nitrides and semiconductors
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eBook $179.00
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  • ISBN 978-90-481-2877-8
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Hardcover $229.00
price for USA
  • ISBN 978-90-481-2876-1
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  • Usually dispatched within 3 to 5 business days.
Softcover $229.00
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  • ISBN 978-94-017-8472-6
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About this book

This book provides a snapshot of recent progress in the field of rare-earth-doped group III-nitride semiconductors, especially GaN, but extending to AlN and the alloys AlGaN, AlInN and InGaN. This material class is currently enjoying an upsurge in interest due to its ideal suitability for both optoelectronic and spintronic applications. The text first introduces the reader to the historical background and the major theoretical challenges presented when 4f electron systems are embedded in a semiconductor matrix. It details the preparation of samples for experimental study, either by in-situ growth or ion implantation/annealing, and describes their microscopic structural characterisation. Optical spectroscopy is a dominant theme, complicated by site multiplicity, whether in homogeneous hosts or in heterostructures such as quantum dots, and enlivened by the abiding fascination of the energy transfer mechanism between the host material and the lumophore. Finally, the rapid progress towards prospective optoelectronic and spintronic devices is presented along with several examples.

Table of contents (11 chapters)

  • Theoretical Modelling of Rare Earth Dopants in GaN

    Jones, R. (et al.)

    Pages 1-24

  • RE Implantation and Annealing of III-Nitrides

    Lorenz, Katharina (et al.)

    Pages 25-54

  • Lattice Location of RE Impurities in IIINitrides

    Vantomme, André (et al.)

    Pages 55-98

  • Electroluminescent Devices Using RE-Doped III-Nitrides

    Wakahara, Akihiro

    Pages 99-113

  • Er-Doped GaN and InxGa1-xN for Optical Communications

    Dahal, R. (et al.)

    Pages 115-157

Buy this book

eBook $179.00
price for USA (gross)
  • ISBN 978-90-481-2877-8
  • Digitally watermarked, DRM-free
  • Included format: PDF
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Hardcover $229.00
price for USA
  • ISBN 978-90-481-2876-1
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
Softcover $229.00
price for USA
  • ISBN 978-94-017-8472-6
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
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Bibliographic Information

Bibliographic Information
Book Title
Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications
Editors
  • Kevin Peter O'Donnell
  • Volkmar Dierolf
Series Title
Topics in Applied Physics
Series Volume
124
Copyright
2010
Publisher
Springer Netherlands
Copyright Holder
Springer Science+Business Media B.V.
eBook ISBN
978-90-481-2877-8
DOI
10.1007/978-90-481-2877-8
Hardcover ISBN
978-90-481-2876-1
Softcover ISBN
978-94-017-8472-6
Series ISSN
0303-4216
Edition Number
1
Number of Pages
XVI, 355
Additional Information
Jointly published with Canopus Academic Publishing Ltd
Topics