Springer Series in Solid-State Sciences

Electronic Properties of Doped Semiconductors

Authors: Shklovskii, B.I., Efros, A.L.

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About this book

First-generation semiconductors could not be properly termed "doped- they were simply very impure. Uncontrolled impurities hindered the discovery of physical laws, baffling researchers and evoking pessimism and derision in advocates of the burgeoning "pure" physical disciplines. The eventual banish­ ment of the "dirt" heralded a new era in semiconductor physics, an era that had "purity" as its motto. It was this era that yielded the successes of the 1950s and brought about a new technology of "semiconductor electronics". Experiments with pure crystals provided a powerful stimulus to the develop­ ment of semiconductor theory. New methods and theories were developed and tested: the effective-mass method for complex bands, the theory of impurity states, and the theory of kinetic phenomena. These developments constitute what is now known as semiconductor phys­ ics. In the last fifteen years, however, there has been a noticeable shift towards impure semiconductors - a shift which came about because it is precisely the impurities that are essential to a number of major semiconductor devices. Technology needs impure semiconductors, which unlike the first-generation items, are termed "doped" rather than "impure" to indicate that the impurity levels can now be controlled to a certain extent.

Table of contents (2 chapter)

  • Hopping Conduction in a Magnetic Field

    Professor Dr. Boris I. Shklovskii, Professor Dr. Alex L. Efros

    Pages 155-179

    Buy Chapter $29.95
  • Variable-Range Hopping Conduction

    Professor Dr. Boris I. Shklovskii, Professor Dr. Alex L. Efros

    Pages 202-227

    Buy Chapter $29.95
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Buy this book

eBook $69.99 net
( price for USA )
  • ISBN 978-3-662-02403-4
  • digitally watermarked, no DRM
  • included format: PDF
  • eBooks can be used on all Reading Devices
Softcover $99.00 net
( price for USA )
  • ISBN 978-3-662-02405-8
  • free shipping for individuals worldwide
  • usually dispatched within 3 to 5 business days

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Bibliographic Information

Bibliographic Information
Book Title
Electronic Properties of Doped Semiconductors
Series Title
Springer Series in Solid-State Sciences
Series Volume
45
Copyright
1984
Publisher
Springer-Verlag Berlin Heidelberg
Copyright Holder
Springer-Verlag Berlin Heidelberg
eBook ISBN
978-3-662-02403-4
DOI
10.1007/978-3-662-02403-4
Softcover ISBN
978-3-662-02405-8
Series ISSN
0171-1873
Edition Number
1
Topics