Ultra-Fast Silicon Bipolar Technology

1. Front Matter

   Pages I-IX

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2. History, Present Trends, and Scaling of Silicon Bipolar Technology

   • L. Treitinger, M. Miura-Mattausch

   Pages 1-27

3. Self-Aligning Technology for Sub-100nm Deep Base Junction Transistors

   • Masahiko Nakamae

   Pages 29-42

4. Vertical Scaling Considerations for Polysilicon-Emitter Bipolar Transistors

   • T. F. Meister, H. Schaber, K. Ehinger, J. Bieger, B. Benna, I. Maier

   Pages 43-59

5. Trench Isolation Schemes for Bipolar Devices: Benefits and Limiting Aspects

   • Hiroshi Goto, Katsuyuki Inayoshi

   Pages 61-77

6. A Salicide Base Contact Technology (SCOT) for Use in High Speed Bipolar VLSI

   • Tadashi Hirao, Tatsuhiko Ikeda, Yoichi Kuramitsu

   Pages 79-94

7. Advanced Self-Alignment Technologies and Resulting Structures of High-Speed Bipolar transistors

   • Tohru Nakamura, Kazuo Nakazato, Katsuyoshi Washio, Youich Tamaki, Mitsuo Namba

   Pages 95-110

8. Trends in Heterojunction Silicon Bipolar Transistors

   • M. Ghannam, J. Nijs, R. Mertens

   Pages 111-133

9. Molecular Beam Epitaxy of Silicon-Based Bipolar Structures

   • E. Kasper, P. Narozny, K. Strohm

   Pages 135-163

10. Back Matter

    Pages 165-167

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Since the first bipolar transistor was investigated in 1947, enormous efforts have been devoted to semiconductor devices. The strong world­ wide competition in fabricating metal-oxide-semiconductor field-effect of develop­ transistor (MOSFET) memories has accelerated the pace ments in semiconductor technology. Bipolar transistors play a major role due to their high-speed performance. Delay times of about 20 ps per gate have already been achieved. Because of this rapid technologi­ cal progress, it is difficult to predict the future with any certainty. In 1987 a special session on ultrafast bipolar transistors was held at the European Solid-State Device Research Conference. Its aim was to sum­ marize the most recent developments and to discuss the future of bip­ olar transistors. This book is based on that session but also includes contributions by other participants, such that a broad range of up-to­ is presented. Several conclusions can be drawn from date information this information: the first and most important is the very large poten­ tial for future progress still existing in this field. This progress is char­ acterized by the drive towards higher speed and lower power con­ sumption required for complex single-chip systems, as well as by sev­ eral concrete technological implementations for fulfilling these dem­ is that a large part of this potential can be ands. The second conclusion realized by rather unsophisticated techniques and configurations well suited to uncomplicated transfer to fabrication.

• VLSI
• circuit
• epitaxy
• integrated circuit
• silicon
• simulation
• transistor

• Central Research and Development, SIEMENS AG, München 83, Fed. Rep. of Germany

  Ludwig Treitinger, Mitiko Miura-Mattausch

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