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Ultra-Fast Silicon Bipolar Technology

  • Textbook
  • © 1988

Overview

Editors:
  1. Ludwig Treitinger

    1. Central Research and Development, SIEMENS AG, München 83, Fed. Rep. of Germany

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  2. Mitiko Miura-Mattausch

    1. Central Research and Development, SIEMENS AG, München 83, Fed. Rep. of Germany

    View editor publications

    You can also search for this editor in PubMed   Google Scholar

Part of the book series: Springer Series in Electronics and Photonics (SSEP, volume 27)

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Table of contents (8 chapters)

  1. Front Matter

    Pages I-IX
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  2. History, Present Trends, and Scaling of Silicon Bipolar Technology

    • L. Treitinger, M. Miura-Mattausch
    Pages 1-27

  3. Self-Aligning Technology for Sub-100nm Deep Base Junction Transistors

    • Masahiko Nakamae
    Pages 29-42

  4. Vertical Scaling Considerations for Polysilicon-Emitter Bipolar Transistors

    • T. F. Meister, H. Schaber, K. Ehinger, J. Bieger, B. Benna, I. Maier
    Pages 43-59

  5. Trench Isolation Schemes for Bipolar Devices: Benefits and Limiting Aspects

    • Hiroshi Goto, Katsuyuki Inayoshi
    Pages 61-77

  6. A Salicide Base Contact Technology (SCOT) for Use in High Speed Bipolar VLSI

    • Tadashi Hirao, Tatsuhiko Ikeda, Yoichi Kuramitsu
    Pages 79-94

  7. Advanced Self-Alignment Technologies and Resulting Structures of High-Speed Bipolar transistors

    • Tohru Nakamura, Kazuo Nakazato, Katsuyoshi Washio, Youich Tamaki, Mitsuo Namba
    Pages 95-110

  8. Trends in Heterojunction Silicon Bipolar Transistors

    • M. Ghannam, J. Nijs, R. Mertens
    Pages 111-133

  9. Molecular Beam Epitaxy of Silicon-Based Bipolar Structures

    • E. Kasper, P. Narozny, K. Strohm
    Pages 135-163

  10. Back Matter

    Pages 165-167
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Keywords

About this book

Since the first bipolar transistor was investigated in 1947, enormous efforts have been devoted to semiconductor devices. The strong world­ wide competition in fabricating metal-oxide-semiconductor field-effect of develop­ transistor (MOSFET) memories has accelerated the pace ments in semiconductor technology. Bipolar transistors play a major role due to their high-speed performance. Delay times of about 20 ps per gate have already been achieved. Because of this rapid technologi­ cal progress, it is difficult to predict the future with any certainty. In 1987 a special session on ultrafast bipolar transistors was held at the European Solid-State Device Research Conference. Its aim was to sum­ marize the most recent developments and to discuss the future of bip­ olar transistors. This book is based on that session but also includes contributions by other participants, such that a broad range of up-to­ is presented. Several conclusions can be drawn from date information this information: the first and most important is the very large poten­ tial for future progress still existing in this field. This progress is char­ acterized by the drive towards higher speed and lower power con­ sumption required for complex single-chip systems, as well as by sev­ eral concrete technological implementations for fulfilling these dem­ is that a large part of this potential can be ands. The second conclusion realized by rather unsophisticated techniques and configurations well suited to uncomplicated transfer to fabrication.

Editors and Affiliations

  • Central Research and Development, SIEMENS AG, München 83, Fed. Rep. of Germany

    Ludwig Treitinger, Mitiko Miura-Mattausch

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