Springer Proceedings in Physics

Semiconductor Interfaces: Formation and Properties

Proceedings of the Workkshop, Les Houches, France February 24–March 6, 1987

Editors: LeLay, Guy, Derrien, Jacques, Boccara, Nino (Eds.)

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About this book

The trend towards miniaturisation of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role on semiconductor interfaces. Great advances have recently been achieved in the elaboration of new thin film materials and in the characterization of their interfacial properties, down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures that were given at the International Winter School on Semiconductor Interfaces: Formation and Properties held at the Centre de Physique des Rouches from 24 February to 6 March, 1987. The aim of this Winter School was to present a comprehensive review of this field, in particular of the materials and methods, and to formulate recom­ mendations for future research. The following topics are treated: (i) Interface formation. The key aspects of molecular beam epitaxy are emphasized, as well as the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. (ii) Fine characterization down to the atomic scale using recently devel­ oped, powerful techniques such as scanning tunneling microscopy, high reso­ lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure. (iii) Specific physical properties of the interfaces and their prospective applications in devices. We wish to thank warmly all the lecturers and participants, as well as the organizing committee, who made this Winter School a success.

Table of contents (28 chapters)

  • An Introduction to the Formation and Properties of Semiconductor Interfaces

    Sébenne, C. A.

    Pages 2-7

  • Formation of Semiconductor Interfaces During Molecular Beam Epitaxy

    Ploog, K.

    Pages 10-42

  • Build-up and Characterization of “Artificial” Surfaces for III—V Compound Semiconductors

    Moison, J. M.

    Pages 43-46

  • Atomic Structure of Semiconductor Surfaces

    Lay, G.

    Pages 48-65

  • Monolayer Sensitive X-Ray Diffraction Techniques: A Short Guided Tour Through the Literature

    Sauvage-Simkin, M.

    Pages 66-68

Buy this book

eBook $109.00
price for USA (gross)
  • ISBN 978-3-642-72967-6
  • Digitally watermarked, DRM-free
  • Included format: PDF
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Softcover $149.00
price for USA
  • ISBN 978-3-642-72969-0
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
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Bibliographic Information

Bibliographic Information
Book Title
Semiconductor Interfaces: Formation and Properties
Book Subtitle
Proceedings of the Workkshop, Les Houches, France February 24–March 6, 1987
Editors
  • Guy LeLay
  • Jacques Derrien
  • Nino Boccara
Series Title
Springer Proceedings in Physics
Series Volume
22
Copyright
1987
Publisher
Springer-Verlag Berlin Heidelberg
Copyright Holder
Springer-Verlag Berlin Heidelberg
eBook ISBN
978-3-642-72967-6
DOI
10.1007/978-3-642-72967-6
Softcover ISBN
978-3-642-72969-0
Series ISSN
0930-8989
Edition Number
1
Number of Pages
XI, 389
Topics