Springer Series in Advanced Microelectronics

High Permittivity Gate Dielectric Materials

Editors: Kar, Samares (Ed.)

  • Most advanced and comprehensive book on high permittivity gate dielectrics
  •  
  • Covers the basics, latest developments, and applications
  • A reference work for researchers, electrical engineers and materials scientists as well as a study text for master and doctor course students
  •  
see more benefits

Buy this book

eBook $139.00
price for USA (gross)
  • ISBN 978-3-642-36535-5
  • Digitally watermarked, DRM-free
  • Included format: EPUB, PDF
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Hardcover $179.00
price for USA
  • ISBN 978-3-642-36534-8
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
Softcover n/a
  • ISBN 978-3-662-50138-2
  • Free shipping for individuals worldwide
Rent the ebook  
  • Rental duration: 1 or 6 month
  • low-cost access
  • online reader with highlighting and note-making option
  • can be used across all devices
About this book

"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects."

.

About the authors

Samares Kar was born in Kolkata, India in 1942. He received the B.Tech. degree in electrical engineering in 1962 from the Indian Institute of Technology in Kharagpur, India, and the M.S. and Ph.D. degrees in electrical engineering from Lehigh University in Bethlehem, Pennsylvania, USA in 1968 and 1970, respectively.

During the period 1963-1965, he worked in West Germany, first as a design engineer with the Hamburger Transformatorenbau in Hamburg, and then as a project engineer with the Continental Elektroindustrie in Rheydt. During the period 1971-1974, he was a member of the scientific staff at the Fraunhofer Institute of Applied Solid State Physics in Freiburg, West Germany. In 1975, he joined the Indian Institute of Technology in Kanpur, where he was a professor of electrical engineering and materials science from 1980 till 2004, an emeritus fellow between 2004 and 2006, and currently is an R & D consultant. In 1979, he was at The Pennsylvania State University, University Park, Pennsylvania as a visiting associate professor of engineering science, and in 1981, he was at Lehigh University, Bethlehem as a visiting professor of electrical engineering. His research interests have included MOS tunnel devices, Si-SiO2 interface states, solar cells, ion-beam induced defects, organic monolayers, high-K gate dielectrics, and MOS/MIS parameter extraction. His seminal work on ultrathin (2-4 nm) SiO2 gate dielectrics, carried out more than three decades ago, provides some basic theory and tools for the current and future generation MOS nano-transistors, in particular, on issues related to the ultimate gate dielectric thinness, electrical characterization, and metal-related interface states.

Dr. Kar was/is the lead organizer of The First, Second, Third, Fourth, and Fifth International Symposium on High Dielectric Constant Materials held respectively in October 2002 in Salt Lake City, UT, in October 2003 in Orlando, FL, in October 2005 in Los Angeles, CA., in October 2006 in Cancun, Mexico, and in October 2007 in Washington, DC. He is the lead editor of the four volumes of the book entitled "Physics and Technology of High-K Gate Dielectrics".

Table of contents (12 chapters)

  • Introduction to High-k Gate Stacks

    Kar, Samares

    Pages 1-45

  • MOSFET: Basics, Characteristics, and Characterization

    Kar, Samares

    Pages 47-152

  • Hafnium-Based Gate Dielectric Materials

    Nishiyama, Akira

    Pages 153-181

  • Hf-Based High-k Gate Dielectric Processing

    Niwa, Masaaki

    Pages 183-234

  • Metal Gate Electrodes

    Schaeffer, Jamie K.

    Pages 235-262

Buy this book

eBook $139.00
price for USA (gross)
  • ISBN 978-3-642-36535-5
  • Digitally watermarked, DRM-free
  • Included format: EPUB, PDF
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Hardcover $179.00
price for USA
  • ISBN 978-3-642-36534-8
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
Softcover n/a
  • ISBN 978-3-662-50138-2
  • Free shipping for individuals worldwide
Rent the ebook  
  • Rental duration: 1 or 6 month
  • low-cost access
  • online reader with highlighting and note-making option
  • can be used across all devices
Loading...

Recommended for you

Loading...

Bibliographic Information

Bibliographic Information
Book Title
High Permittivity Gate Dielectric Materials
Editors
  • Samares Kar
Series Title
Springer Series in Advanced Microelectronics
Series Volume
43
Copyright
2013
Publisher
Springer-Verlag Berlin Heidelberg
Copyright Holder
Springer-Verlag Berlin Heidelberg
eBook ISBN
978-3-642-36535-5
DOI
10.1007/978-3-642-36535-5
Hardcover ISBN
978-3-642-36534-8
Softcover ISBN
978-3-662-50138-2
Series ISSN
1437-0387
Edition Number
1
Number of Pages
XXXII, 489
Number of Illustrations and Tables
157 b/w illustrations, 168 illustrations in colour
Topics