Springer Series in Materials Science

Technology of Gallium Nitride Crystal Growth

Editors: Ehrentraut, Dirk, Meissner, Elke, Bockowski, Michal (Eds.)

  • Summarizes the current state-of-the-art of GaN growth technology
  • Integrates materials science and physical aspects
  • A reference work for researchers and engineers alike
  • May serve as a study text for graduate students in materials sciences
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eBook $189.00
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  • ISBN 978-3-642-04830-2
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Hardcover $239.00
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  • ISBN 978-3-642-04828-9
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Softcover $239.00
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  • ISBN 978-3-642-26389-7
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
About this book

This book deals with the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. Leading experts from industry and academia report in a very comprehensive way on the current state-of-the-art of the growth technologies and optical and structural properties of the GaN crystals are compared.

About the authors

Dr. Dirk Ehrentraut received a Diploma in Crystallography from the Humboldt University of Berlin, Germany and a Ph.D. in Sciences from the Institute of Applied Optics at the Swiss Federal Institute of Technology in Lausanne (EPFL), Switzerland. He joined the Tohoku University end of 2003 and is currently a visiting professor of the Institute of Multidisciplinary Research of Advanced Materials. His field of competence covers the crystal growth of films and bulk material from the liquid and vapor phase and material aspects of the wide band gap semiconductors of group-III nitrides and ZnO. He has authored 130 publications in books, journals and conferences and holds 6 patents.

Dr. Elke Meissner graduated from the University of Erlangen, Germany in the field of applied mineralogy. Later she received a PhD from the University of Bayreuth, Germany. She is a senior scientist in the Department of Crystal Growth at the Fraunhofer Institute of Integrated Systems and Device Technology (IISB) in Erlangen and became head of the working group Defect Engineering in 2007. She has a broad background in process properties correlation for advanced materials in various fields like silicon nitride ceramics and applied & experimental mineralogy. Her recent work is strongly focussed on the structural characterization of crystals and crystal layers of novel semiconductors. Dr. Meissner is inventor or co-inventor of 3 international patents and authored more than 50 papers or contributions to journals and conference.

Dr. Michal Bockowski received the M.Sc. Eng. in Solid State Physics from the Warsaw University of Technology, Poland and the Ph.D. in the Chemistry of Solids 1995 from the University Montpellier II, France. He is currently a Research Associate of the Institute of High Pressure Physics of the Polish Academy of Sciences and a technologist at TopGaN Ltd., Poland. He has authored >120 publications in journals and conferences and holds 2 international patents.

Table of contents (14 chapters)

  • Development of the Bulk GaN Substrate Market

    Hanser, Andrew D. (et al.)

    Pages 3-27

  • Hydride Vapor Phase Epitaxy of GaN

    Koukitu, Akinori (et al.)

    Pages 31-60

  • Growth of Bulk GaN Crystals by HVPE on Single Crystalline GaN Seeds

    Łucznik, B. (et al.)

    Pages 61-78

  • Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy Using Void-Assisted Separation Technology

    Oshima, Y. (et al.)

    Pages 79-96

  • Nonpolar and Semipolar GaN Growth by HVPE

    Fini, Paul T. (et al.)

    Pages 97-117

Buy this book

eBook $189.00
price for USA (gross)
  • ISBN 978-3-642-04830-2
  • Digitally watermarked, DRM-free
  • Included format: PDF
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Hardcover $239.00
price for USA
  • ISBN 978-3-642-04828-9
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
Softcover $239.00
price for USA
  • ISBN 978-3-642-26389-7
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
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Bibliographic Information

Bibliographic Information
Book Title
Technology of Gallium Nitride Crystal Growth
Editors
  • Dirk Ehrentraut
  • Elke Meissner
  • Michal Bockowski
Series Title
Springer Series in Materials Science
Series Volume
133
Copyright
2010
Publisher
Springer-Verlag Berlin Heidelberg
Copyright Holder
Springer-Verlag Berlin Heidelberg
eBook ISBN
978-3-642-04830-2
DOI
10.1007/978-3-642-04830-2
Hardcover ISBN
978-3-642-04828-9
Softcover ISBN
978-3-642-26389-7
Series ISSN
0933-033X
Edition Number
1
Number of Pages
XXII, 326
Number of Illustrations and Tables
200 b/w illustrations
Topics