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  • © 2000

Ferroelectric Memories

Authors:

  • State-of-the-art device designs are illustrated among the book's many figures.
  • More than 500 up-to-date references and 76 problems for students make the book useful both as a research reference and as a text for graduate or advanced undergraduate students.
  • This book is the only single-authored one in the field, all the other are edited collections of papers.

Part of the book series: Springer Series in Advanced Microelectronics (MICROELECTR., volume 3)

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Table of contents (19 chapters)

  1. Front Matter

    Pages I-XVI
  2. Introduction

    • James F. Scott
    Pages 1-22
  3. Electrical Breakdown (DRAMs and NV-RAMs)

    • James F. Scott
    Pages 53-77
  4. Leakage Currents

    • James F. Scott
    Pages 79-94
  5. Capacitance—Voltage Data: C(V)

    • James F. Scott
    Pages 95-120
  6. Switching Kinetics

    • James F. Scott
    Pages 121-132
  7. Charge Injection and Fatigue

    • James F. Scott
    Pages 133-143
  8. Frequency Dependence

    • James F. Scott
    Pages 145-147
  9. Phase Sequences in Processing

    • James F. Scott
    Pages 149-152
  10. SBT-Family Aurivillius-Phase Layer Structures

    • James F. Scott
    Pages 153-164
  11. Deposition and Processing

    • James F. Scott
    Pages 165-174
  12. Nondestructive Read-Out Devices

    • James F. Scott
    Pages 175-178
  13. Wafer Bonding

    • James F. Scott
    Pages 185-187
  14. Electron-Emission and Flat-Panel Displays

    • James F. Scott
    Pages 189-190
  15. Optical Devices

    • James F. Scott
    Pages 191-192
  16. Nanophase Devices

    • James F. Scott
    Pages 193-208
  17. Drawbacks and Disadvantages

    • James F. Scott
    Pages 209-215
  18. Exercises

    • James F. Scott
    Pages 217-223

About this book

Ferroelectric memories have changed in 10 short years from academic curiosities of the university research labs to commercial devices in large-scale production. This is the first text on ferroelectric memories that is not just an edited collection of papers by different authors. Intended for applied physicists, electrical engineers, materials scientists and ceramists, it includes ferroelectric fundamentals, especially for thin films, circuit diagrams and processsing chapters, but emphazises device physics. Breakdown mechanisms, switching kinetics and leakage current mechanisms have lengthly chapters devoted to them. The book will be welcomed by research scientists in industry and government laboratories and in universities. It also contains 76 problems for students, making it particularly useful as a textbook for fourth-year undergraduate or first-year graduate students.

Authors and Affiliations

  • Centre for Ferroics, Earth Sciences Dept., Cambridge University, Cambridge, England

    James F. Scott

Bibliographic Information

Buy it now

Buying options

eBook USD 129.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book USD 169.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book USD 169.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Other ways to access