Physics of Ferroelectrics

1. Front Matter

   Pages I-XII

   PDF

2. Modern Physics of Ferroelectrics: Essential Background

   • Karin M. Rabe, Matthew Dawber, Céline Lichtensteiger, Charles H. Ahn, Jean-Marc Triscone

   Pages 1-30

3. Theory of Polarization: A Modern Approach

   • Raffaele Resta, David Vanderbilt

   Pages 31-68

4. A Landau Primer for Ferroelectrics

   • Premi Chandra, Peter B. Littlewood

   Pages 69-116

5. First-Principles Studies of Ferroelectric Oxides

   • Karin M. Rabe, Philippe Ghosez

   Pages 117-174

6. Analogies and Differences between Ferroelectrics and Ferromagnets

   • Nicola A. Spaldin

   Pages 175-218

7. Growth and Novel Applications of Epitaxial Oxide Thin Films

   • Agham-Bayan Posadas, Mikk Lippmaa, Fred J. Walker, Matthew Dawber, Charles H. Ahn, Jean-Marc Triscone

   Pages 219-304

8. Ferroelectric Size Effects

   • Céline Lichtensteiger, Matthew Dawber, Jean-Marc Triscone

   Pages 305-338

9. Nanoscale Studies of Domain Walls in Epitaxial Ferroelectric Thin Films

   • Patrycja Paruch, Thierry Giamarchi, Jean-Marc Triscone

   Pages 339-362

10. APPENDIX A – Landau Free-Energy Coefficients

    • Long-Qing Chen

    Pages 363-372

11. Appendix B – Material–Substrate Combinations Tables

    • Céline Lichtensteiger, Matthew Dawber

    Pages 373-384

12. Back Matter

    Pages 385-389

    PDF

During the past two decades, revolutionary breakthroughs have occurred in the understanding of ferroelectric materials, both from the perspective of theory and experiment. First principles approaches, including the Berry phase formulation of ferroelectricity, now allow accurate, quantitative predictions of material properties, and single crystalline thin films are now available for fundamental studies of these materials. In addition, the need for high dielectric constant insulators and nonvolatile memories in semiconductor applications has motivated a renaissance in the investigation of these materials. This book addresses the paradigmatic shifts in understanding brought about by these breakthroughs, including the consideration of novel fabrication methods and nanoscale applications of these materials, and new theoretical methods such as the effective Hamiltonian approach and density functional theory.

• Epitaxial Ferroelectric Thin Films
• Helium-Atom-Streuung
• Semiconductor
• Size Effects
• electricity
• ferroelectrics
• first principles calculations
• growth methods
• material
• materials
• modern theory of ferroelectrics
• nanoscale systems
• oxides
• tables
• thin films

• Department of Physics and Astronomy, Rutgers University, Piscataway, USA

  Karin M. Rabe

• Departements of Applied Physics and Physics, Yale University, New Haven, USA

  Charles H. Ahn

• Condensed Matter Physics Department, University of Geneva, Geneva 4, Switzerland

  Jean-Marc Triscone

Policies and ethics