Overview
- Addresses all theoretical/computational aspects of the growth of III-nitride in a single comprehensive work
- Also discusses the underlying scientific principles
- Illustrates how the amount of experimental effort can be reduced with appropriate simulations
Part of the book series: Springer Series in Materials Science (SSMATERIALS, volume 269)
Access this book
Tax calculation will be finalised at checkout
Other ways to access
Table of contents (10 chapters)
-
Front Matter
-
Fundamentals of Computational Approach to Epitaxial Growth of III-Nitride Compounds
-
Front Matter
-
-
Applications of Computational Approach to Epitaxial Growth of III-Nitride Compounds
-
Front Matter
-
-
Back Matter
Keywords
About this book
This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.
Editors and Affiliations
About the editors
Takashi Matsuoka received his PhD degree in Engineering from Hokkaido University, Sapporo, Japan and has been a Professor at the Institute for Materials Research at Tohoku University, Sendai, Japan since 2005. Having worked at the NTT from 1978 to 2005, he developed a single-longitudinal mode laser diode and proposed the InGaAlN system and the epitaxial growth of a single crystalline InGaN layer for blue LEDs.
Yoshihiro Kangawa has been an Associate Professor at the Research Institute for Applied Mechanics (RIAM) of Kyushu University, Fukuoka, Japan since 2005. He received his Doctor of Engineering from Kyushu University and was a research associate at Gakushuin University, Tokyo, Japan from 2000 to 2002. He subsequently served as a research associate at the Department of Applied Chemistry at Tokyo University of Agriculture and Technology from 2002 to 2004. His research is concerned with theoretical investigation of the crystal growth mechanism, e.g. using ab initio-based approaches and thermodynamic analysis.
Bibliographic Information
Book Title: Epitaxial Growth of III-Nitride Compounds
Book Subtitle: Computational Approach
Editors: Takashi Matsuoka, Yoshihiro Kangawa
Series Title: Springer Series in Materials Science
DOI: https://doi.org/10.1007/978-3-319-76641-6
Publisher: Springer Cham
eBook Packages: Chemistry and Materials Science, Chemistry and Material Science (R0)
Copyright Information: Springer International Publishing AG, part of Springer Nature 2018
Hardcover ISBN: 978-3-319-76640-9Published: 25 April 2018
Softcover ISBN: 978-3-030-09542-0Published: 03 January 2019
eBook ISBN: 978-3-319-76641-6Published: 17 April 2018
Series ISSN: 0933-033X
Series E-ISSN: 2196-2812
Edition Number: 1
Number of Pages: IX, 223
Number of Illustrations: 35 b/w illustrations, 101 illustrations in colour
Topics: Optical and Electronic Materials, Semiconductors, Numerical and Computational Physics, Simulation, Surfaces and Interfaces, Thin Films, Crystallography and Scattering Methods