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Dielectric Breakdown in Gigascale Electronics

Time Dependent Failure Mechanisms

  • Book
  • © 2016

Overview

Authors:
  1. Juan Pablo Borja

    1. General Electric Global Research Center, Niskayuna, USA

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  2. Toh-Ming Lu

    1. Department of Physics, Applied Physics, & Astronomy, Rensselaer Polytechnic Institute, Troy, USA

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    You can also search for this author in PubMed   Google Scholar

  3. Joel Plawsky

    1. Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, USA

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  • Comprehensively describes established and novel concepts for time-to-failure modeling of low permittivity, nano-porous dielectric films
  • Introduces key concepts from reliability engineering combined with the latest developments in interconnect design
  • Covers concepts essential to predicting the lifetime of interconnect systems manufactured using sub 14nm process technology
  • Includes supplementary material: sn.pub/extras

Part of the book series: SpringerBriefs in Materials (BRIEFSMATERIALS)

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Table of contents (9 chapters)

  1. Front Matter

    Pages i-viii
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  2. Introduction

    • Juan Pablo Borja, Toh-Ming Lu, Joel Plawsky
    Pages 1-9

  3. General Theories

    • Juan Pablo Borja, Toh-Ming Lu, Joel Plawsky
    Pages 11-19

  4. Measurement Tools and Test Structures

    • Juan Pablo Borja, Toh-Ming Lu, Joel Plawsky
    Pages 21-26

  5. Experimental Techniques

    • Juan Pablo Borja, Toh-Ming Lu, Joel Plawsky
    Pages 27-36

  6. Breakdown Experiments

    • Juan Pablo Borja, Toh-Ming Lu, Joel Plawsky
    Pages 37-57

  7. Kinetics of Charge Carrier Confinement in Thin Dielectrics

    • Juan Pablo Borja, Toh-Ming Lu, Joel Plawsky
    Pages 59-75

  8. Theory of Dielectric Breakdown in Nano-Porous Thin Films

    • Juan Pablo Borja, Toh-Ming Lu, Joel Plawsky
    Pages 77-91

  9. Dielectric Breakdown in Copper Interconnects

    • Juan Pablo Borja, Toh-Ming Lu, Joel Plawsky
    Pages 93-98

  10. Reconsidering Conventional Field Acceleration Models

    • Juan Pablo Borja, Toh-Ming Lu, Joel Plawsky
    Pages 99-105
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Keywords

About this book

This book focuses on the experimental and theoretical aspects of the time-dependent breakdown of advanced dielectric films used in gigascale electronics. Coverage includes the most important failure mechanisms for thin low-k films, new and established experimental techniques, recent advances in the area of dielectric failure, and advanced simulations/models to resolve and predict dielectric breakdown, all of which are of considerable importance for engineers and scientists working on developing and integrating present and future chip architectures. The book is specifically designed to aid scientists in assessing the reliability and robustness of electronic systems employing low-k dielectric materials such as nano-porous films. Similarly, the models presented here will help to improve current methodologies for estimating the failure of gigascale electronics at device operating conditions from accelerated lab test conditions. Numerous graphs, tables, and illustrations are included to facilitate understanding of the topics.  Readers will be able to understand dielectric breakdown in thin films along with the main failure modes and characterization techniques. In addition, they will gain expertise on conventional as well as new field acceleration test models for predicting long term dielectric degradation.

Authors and Affiliations

  • General Electric Global Research Center, Niskayuna, USA

    Juan Pablo Borja

  • Department of Physics, Applied Physics, & Astronomy, Rensselaer Polytechnic Institute, Troy, USA

    Toh-Ming Lu

  • Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, USA

    Joel Plawsky

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