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Hot Carrier Degradation in Semiconductor Devices

Editors: Grasser, Tibor (Ed.)

  • Describes the intricacies of hot carrier degradation in modern semiconductor technologies
  • Covers the entire hot carrier degradation phenomenon, including topics such as characterization, carrier transport, carrier-defect interaction, technological impact, circuit impact, etc
  • Enables detailed understanding of carrier transport, interaction of the carrier ensemble with the defect precursors, and an accurate assessment of how the newly created defects impact the device performance
  • Covers modeling issues starting from detailed physics-based TCAD approaches up to efficient SPICE-compatible compact models
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eBook $109.00
price for USA (gross)
  • ISBN 978-3-319-08994-2
  • Digitally watermarked, DRM-free
  • Included format: PDF, EPUB
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Hardcover $139.00
price for USA
  • ISBN 978-3-319-08993-5
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
Softcover $139.00
price for USA
  • Customers within the U.S. and Canada please contact Customer Service at 1-800-777-4643, Latin America please contact us at +1-212-460-1500 (Weekdays 8:30am – 5:30pm ET) to place your order.
  • Due: November 10, 2016
  • ISBN 978-3-319-35912-0
  • Free shipping for individuals worldwide
About this book

This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices.  Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance. 

About the authors

Tibor Grasser is an Associate Professor at the Institute for Microelectronics for Technische Universität Wien.

Table of contents (16 chapters)

  • From Atoms to Circuits: Theoretical and Empirical Modeling of Hot Carrier Degradation

    McMahon, William (et al.)

    Pages 3-27

  • The Energy Driven Hot Carrier Model

    Rauch, Stewart E. (et al.)

    Pages 29-56

  • Hot-Carrier Degradation in Decananometer CMOS Nodes: From an Energy-Driven to a Unified Current Degradation Modeling by a Multiple-Carrier Degradation Process

    Bravaix, Alain (et al.)

    Pages 57-103

  • Physics-Based Modeling of Hot-Carrier Degradation

    Tyaginov, Stanislav

    Pages 105-150

  • Semi-analytic Modeling for Hot Carriers in Electron Devices

    Zaka, Alban (et al.)

    Pages 151-196

Buy this book

eBook $109.00
price for USA (gross)
  • ISBN 978-3-319-08994-2
  • Digitally watermarked, DRM-free
  • Included format: PDF, EPUB
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Hardcover $139.00
price for USA
  • ISBN 978-3-319-08993-5
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
Softcover $139.00
price for USA
  • Customers within the U.S. and Canada please contact Customer Service at 1-800-777-4643, Latin America please contact us at +1-212-460-1500 (Weekdays 8:30am – 5:30pm ET) to place your order.
  • Due: November 10, 2016
  • ISBN 978-3-319-35912-0
  • Free shipping for individuals worldwide
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Bibliographic Information

Bibliographic Information
Book Title
Hot Carrier Degradation in Semiconductor Devices
Editors
  • Tibor Grasser
Copyright
2015
Publisher
Springer International Publishing
Copyright Holder
Springer International Publishing Switzerland
eBook ISBN
978-3-319-08994-2
DOI
10.1007/978-3-319-08994-2
Hardcover ISBN
978-3-319-08993-5
Softcover ISBN
978-3-319-35912-0
Edition Number
1
Number of Pages
X, 517
Number of Illustrations and Tables
99 b/w illustrations, 253 illustrations in colour
Topics