Springer Theses

GaP Heteroepitaxy on Si(100)

Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients

Authors: Döscher, Henning

  • Winner of a 2012 German Physical Society Dissertation Award
  • An important contribution to improving optoelectronic devices and performance of photovoltaic materials
  • Interesting for all experimentalists working on the integration of III-V semiconductors and silicon
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Hardcover $129.00
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  • Due: October 20, 2016
  • ISBN 978-3-319-37955-5
  • Free shipping for individuals worldwide
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About this book

Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial polar-on-nonpolar heterointerface. This thesis reports almost lattice-matched growth of thin gallium phosphide films as a viable model system for III-V/Si(100) interface investigations. The impact of antiphase disorder on the heteroepitaxial growth surface provides quantitative optical in situ access to one of the most notorious defect mechanisms, even in the vapor phase ambient common for compound semiconductor technology. Precise control over the surface structure of the Si(100) substrates prior to III-V nucleation prevents the formation of antiphase domains. The hydrogen-based process ambient enables the preparation of anomalous double-layer step structures on Si(100), highly beneficial for subsequent III-V integration.

About the authors

Dr. Henning Döscher
TU Ilmenau
Institut für Physik, FG Photovoltaik
Ehrenbergstr. 29
98693 Ilmenau

Table of contents (6 chapters)

Buy this book

eBook $99.00
price for USA (gross)
  • ISBN 978-3-319-02880-4
  • Digitally watermarked, DRM-free
  • Included format: PDF, EPUB
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Hardcover $129.00
price for USA
  • ISBN 978-3-319-02879-8
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
Softcover $129.00
price for USA
  • Customers within the U.S. and Canada please contact Customer Service at 1-800-777-4643, Latin America please contact us at +1-212-460-1500 (Weekdays 8:30am – 5:30pm ET) to place your order.
  • Due: October 20, 2016
  • ISBN 978-3-319-37955-5
  • Free shipping for individuals worldwide
Rent the ebook  
  • Rental duration: 1 or 6 month
  • low-cost access
  • online reader with highlighting and note-making option
  • can be used across all devices
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Bibliographic Information

Bibliographic Information
Book Title
GaP Heteroepitaxy on Si(100)
Book Subtitle
Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients
Authors
Series Title
Springer Theses
Copyright
2013
Publisher
Springer International Publishing
Copyright Holder
Springer International Publishing Switzerland
eBook ISBN
978-3-319-02880-4
DOI
10.1007/978-3-319-02880-4
Hardcover ISBN
978-3-319-02879-8
Softcover ISBN
978-3-319-37955-5
Series ISSN
2190-5053
Edition Number
1
Number of Pages
XIV, 143
Number of Illustrations and Tables
47 b/w illustrations, 33 illustrations in colour
Topics