Springer Tracts in Modern Physics

Debye Screening Length

Effects of Nanostructured Materials

Authors: Ghatak, Kamakhya Prasad, Bhattacharya, Sitangshu

  • Discusses the importance of measurement of band gap in optoelectronic materials under intense in built electric field in nano devices and strong external photo excitation
  • Gives information on measuring photon-induced physical properties
  •                                                                                             Contains 150 open research problems which are useful for both PhD students and researchers
  • Is written for advanced graduate students, professionals, researchers and engineers in the fields of solid state sciences, material science, nanoscience and technology
  • Covers a wide range of different technologically important electronic compounds in detail
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eBook $139.00
price for USA (gross)
  • ISBN 978-3-319-01339-8
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  • Immediate eBook download after purchase
Hardcover $179.00
price for USA
  • ISBN 978-3-319-01338-1
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
Softcover $179.00
price for USA
  • Customers within the U.S. and Canada please contact Customer Service at 1-800-777-4643, Latin America please contact us at +1-212-460-1500 (Weekdays 8:30am – 5:30pm ET) to place your order.
  • Due: October 6, 2016
  • ISBN 978-3-319-34350-1
  • Free shipping for individuals worldwide
Rent the ebook  
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About this book

This monograph solely investigates the Debye Screening Length (DSL) in semiconductors and their nano-structures. The materials considered are quantized structures of non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V and Bismuth Telluride respectively. The DSL in opto-electronic materials and their quantum confined counterparts is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestions for the experimental determination of 2D and 3D DSL and the importance of measurement of band gap in optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring photon induced physical properties) have also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the DSL and the DSL in heavily doped semiconductors and their nanostructures has been investigated. This monograph contains 150 open research problems which form the integral part of the text and are useful for both PhD students and researchers in the fields of solid-state sciences, materials science, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures.

About the authors

Prof. Dr. Eng. Kamakhya Prasad Ghatak is the first recipient of the degree of Doctor of Engineering of Jadavpur University in 1991 since the University inception in 1955. He is the principal co-author of more than 250 scientific research papers in international peer reviewed journals and the said five research monographs. He is the invited speaker of SPIE, MRS etc. and is the supervisor of more than two dozens of PhD candidates. His teaching interests are non-linear circuit theory, electron transport and nonlinear mechanics. His present research interests are nano science and technology besides number theory.

Dr. Sitangshu Bhattacharya obtained his M.Sc. and PhD degrees in 2003 and 2009 respectively. He is the co-author of more than 50 scientific research papers in electro-thermal transport phenomena in semiconductor nanostructures in international peer reviewed journals and five research monographs among them, three from Springer series in Materials Science (Vols. 116,137 and 167), one from Springer Series in Nanostructure Science and Technology and one from Springer series in Solid-State Sciences (Vol. 170) respectively. His present research interest is in electro-thermal management in quantum effect devices and interconnects.

Table of contents (15 chapters)

  • The DSL in Quantum Wells of Non-Parabolic Semiconductors

    Ghatak, Kamakhya Prasad (et al.)

    Pages 3-61

  • The DSL in NIPI Structures of Non-Parabolic Semiconductors

    Ghatak, Kamakhya Prasad (et al.)

    Pages 63-75

  • The DSL in Inversion Layers of Non-Parabolic Semiconductors

    Ghatak, Kamakhya Prasad (et al.)

    Pages 77-106

  • The DSL for III–V, Ternary and Quaternary Semiconductors Under External Photo-Excitation

    Ghatak, Kamakhya Prasad (et al.)

    Pages 109-131

  • The DSL for Ultra-Thin Films of III–V, Ternary and Quaternary Semiconductors Under External Photo-Excitation

    Ghatak, Kamakhya Prasad (et al.)

    Pages 133-149

Buy this book

eBook $139.00
price for USA (gross)
  • ISBN 978-3-319-01339-8
  • Digitally watermarked, DRM-free
  • Included format: PDF, EPUB
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Hardcover $179.00
price for USA
  • ISBN 978-3-319-01338-1
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
Softcover $179.00
price for USA
  • Customers within the U.S. and Canada please contact Customer Service at 1-800-777-4643, Latin America please contact us at +1-212-460-1500 (Weekdays 8:30am – 5:30pm ET) to place your order.
  • Due: October 6, 2016
  • ISBN 978-3-319-34350-1
  • Free shipping for individuals worldwide
Rent the ebook  
  • Rental duration: 1 or 6 month
  • low-cost access
  • online reader with highlighting and note-making option
  • can be used across all devices
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Bibliographic Information

Bibliographic Information
Book Title
Debye Screening Length
Book Subtitle
Effects of Nanostructured Materials
Authors
Series Title
Springer Tracts in Modern Physics
Series Volume
255
Copyright
2014
Publisher
Springer International Publishing
Copyright Holder
Springer International Publishing Switzerland
eBook ISBN
978-3-319-01339-8
DOI
10.1007/978-3-319-01339-8
Hardcover ISBN
978-3-319-01338-1
Softcover ISBN
978-3-319-34350-1
Series ISSN
0081-3869
Edition Number
1
Number of Pages
XXXIII, 385
Number of Illustrations and Tables
123 b/w illustrations
Topics