Compound and Josephson High-Speed Devices

1. Front Matter

   Pages i-xii

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2. Introduction

   • Takahiko Misugi, Akihiro Shibatomi

   Pages 1-8

3. GaAs Materials

   • Shin-ichi Akai, Masamichi Yokogawa

   Pages 9-61

4. High-Speed Analog Integrated Circuits

   • Hideaki Kohzu, Tsutomu Noguchi

   Pages 63-81

5. GaAs ICs for Digital Applications

   • Masahiro Hirayama, Kazuyoshi Asai, Takashi Mizutani

   Pages 83-139

6. HEMT Materials

   • Kazuo Kondo, Junji Komeno

   Pages 141-169

7. HEMT Devices

   • Masayuki Abe, Takashi Mimura

   Pages 171-213

8. Heterojunction Bipolar Transistors

   • Tadao Ishibashi

   Pages 215-253

9. Josephson Digital Devices

   • Hisao Hayakawa, Seigo Kotani

   Pages 255-295

10. Back Matter

    Pages 297-306

    PDF

In recent years, III-V devices, integrated circuits, and superconducting integrated circuits have emerged as leading contenders for high-frequency and ultrahigh­ speed applications. GaAs MESFETs have been applied in microwave systems as low-noise and high-power amplifiers since the early 1970s, replacing silicon devices. The heterojunction high-electron-mobility transistor (HEMT), invented in 1980, has become a key component for satellite broadcasting receiver systems, serving as the ultra-low-noise device at 12 GHz. Furthermore, the heterojunction bipolar transistor (HBT) has been considered as having the highest switching speed and cutoff frequency in the semiconductor device field. Initially most of these devices were used for analog high-frequency applications, but there is also a strong need to develop high-speed III-V digital devices for computer, telecom­ munication, and instrumentation systems, to replace silicon high-speed devices, because of the switching-speed and power-dissipation limitations of silicon. The potential high speed and low power dissipation of digital integrated circuits using GaAs MESFET, HEMT, HBT, and superconducting Josephson junction devices has evoked tremendous competition in the race to develop such technology. A technology review shows that Japanese research institutes and companies have taken the lead in the development of these devices, and some integrated circuits have already been applied to supercomputers in Japan. The activities of Japanese research institutes and companies in the III-V and superconducting device fields have been superior for three reasons. First, bulk crystal growth, epitaxial growth, process, and design technology were developed at the same time.

• analog
• heterojunction bipolar transistor
• integrated circuit
• material
• semiconductor
• transistor

• Fujitsu Techno Research Ltd., Kawasaki 211, Japan

  Takahiko Misugi

• Fujitsu Laboratories Limited, Atsugi, Japan

  Akihiro Shibatomi

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