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Ion Implantation: Basics to Device Fabrication

  • Book
  • © 1995

Overview

Authors:
  1. Emanuele Rimini

    1. Catania University, Italy

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Part of the book series: The Springer International Series in Engineering and Computer Science (SECS, volume 293)

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Table of contents (8 chapters)

  1. Front Matter

    Pages iii-xiii
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  2. Semiconductor Devices

    • Emanuele Rimini
    Pages 1-32

  3. Ion Implanters

    • Emanuele Rimini
    Pages 33-77

  4. Range Distribution

    • Emanuele Rimini
    Pages 79-130

  5. Radiation Damage

    • Emanuele Rimini
    Pages 131-172

  6. Annealing and Secondary Defects

    • Emanuele Rimini
    Pages 173-216

  7. Analytical Techniques

    • Emanuele Rimini
    Pages 217-258

  8. Silicon Based Devices

    • Emanuele Rimini
    Pages 259-313

  9. Ion Implantation in Compound Semiconductor and Buried Layer Synthesis

    • Emanuele Rimini
    Pages 315-358

  10. Back Matter

    Pages 359-393
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Keywords

About this book

Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci­ entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im­ planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is­ sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth­ ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.

Authors and Affiliations

  • Catania University, Italy

    Emanuele Rimini

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