Springer Theses

Atomic Scale Characterization and First-Principles Studies of Si₃N₄ Interfaces

Authors: Walkosz, Weronika

  • Nominated as an outstanding contribution by the University of Illinois – Chicago
  • Offers fundamental results which influence many high temperature and pressure applications
  • Provides findings to offer increased control over the performance of ceramic and semiconductor materials
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  • ISBN 978-1-4419-7817-2
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About this book

This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline β−Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF).  These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications.  The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before.  The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications.

This Doctoral Thesis has been accepted by the University of Illinois-Chicago, Chicago, USA.

Table of contents (8 chapters)

  • Silicon Nitride Ceramics

    Walkosz, Weronika

    Pages 1-10

  • Theoretical Methods and Approximations

    Walkosz, Weronika

    Pages 11-21

  • Overview of Experimental Tools

    Walkosz, Weronika

    Pages 23-43

  • Structural Energetics of β- $${\bf{{Si}_3{N}_4(10\overline{1}0)}}$$ Surfaces

    Walkosz, Weronik

    Pages 45-65

  • Atomic-Resolution Study of the Interfacial Bonding at Si3N4/CeO2−δ Grain Boundaries

    Walkosz, Weronika

    Pages 67-73

Buy this book

eBook $99.00
price for USA (gross)
  • ISBN 978-1-4419-7817-2
  • Digitally watermarked, DRM-free
  • Included format: PDF, EPUB
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Hardcover $129.00
price for USA
  • ISBN 978-1-4419-7816-5
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
Softcover $129.00
price for USA
  • ISBN 978-1-4614-2857-2
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
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Bibliographic Information

Bibliographic Information
Book Title
Atomic Scale Characterization and First-Principles Studies of Si₃N₄ Interfaces
Authors
Series Title
Springer Theses
Copyright
2011
Publisher
Springer-Verlag New York
Copyright Holder
Springer Science+Business Media, LLC
eBook ISBN
978-1-4419-7817-2
DOI
10.1007/978-1-4419-7817-2
Hardcover ISBN
978-1-4419-7816-5
Softcover ISBN
978-1-4614-2857-2
Series ISSN
2190-5053
Edition Number
1
Number of Pages
XIV, 110
Topics