Springer Proceedings in Physics

Microscopy of Semiconducting Materials 2007

Proceedings of the 15th Conference, 2-5 April 2007, Cambridge, UK

Editors: Cullis, A.G., Midgley, P.A. (Eds.)

  • Gives a complete overview of nanostructures of all types from quantum dots to wires to nanotubes
  • Complete study of the effects of semiconductor processing treatment such as oxidation, nitridation, ion implantation, and annealing
  • Provides an up-to-date overview of lattice defects and impurity behavior in semiconducting materials
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eBook $279.00
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  • ISBN 978-1-4020-8615-1
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  • Immediate eBook download after purchase
Hardcover $359.00
price for USA
  • ISBN 978-1-4020-8614-4
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About this book

The fifteenth international conference on Microscopy of Semiconducting Materials took place in Cambridge, UK on 2-5 April 2007. It was organised by the Institute of Physics, with co-sponsorship by the Royal Microscopical Society and endorsement by the Materials Research Society. The conference focused upon the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy, scanning probe microscopy and X-ray-based methods.
Conference sessions concentrated on key topics including state-of-the-art studies in high resolution imaging and analytical electron microscopy, advanced scanning probe microscopy, scanning electron microscopy and focused ion beam applications, novel epitaxial layer phenomena, the properties of quantum nanostructures, III-nitride developments, GeSi/Si for advanced devices, metal-semiconductor contacts and silicides and the important effects of critical device processing treatments. Accordingly, this volume should be of direct interest to researchers in areas ranging from fundamental studies to electronic device assessment.

Table of contents (105 chapters)

  • The Puzzle of Exciton Localisation in GaN-Based Structures: TEM, AFM and 3D APFIM Hold the Key

    Humphreys, C J (et al.)

    Pages 3-12

  • Elastic Strain Distribution in GaN/AlN Quantum Dot Structures: Theory and Experiment

    Andreev, A (et al.)

    Pages 13-16

  • Concentration Evaluation in Nanometre-Sized In x Ga1-x N Islands Using Transmission Electron Microscopy

    Pretorius, A (et al.)

    Pages 17-20

  • Optical Properties of InGaN Quantum Dots With and Without a GaN Capping Layer

    Wang, Q (et al.)

    Pages 21-24

  • Strain Relaxation in an AlGaN/GaN Quantum Well System

    Cherns, P D (et al.)

    Pages 25-28

Buy this book

eBook $279.00
price for USA (gross)
  • ISBN 978-1-4020-8615-1
  • Digitally watermarked, DRM-free
  • Included format: PDF
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Hardcover $359.00
price for USA
  • ISBN 978-1-4020-8614-4
  • Free shipping for individuals worldwide
  • This title is currently reprinting. You can pre-order your copy now.
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Bibliographic Information

Bibliographic Information
Book Title
Microscopy of Semiconducting Materials 2007
Book Subtitle
Proceedings of the 15th Conference, 2-5 April 2007, Cambridge, UK
Editors
  • A.G. Cullis
  • P.A. Midgley
Series Title
Springer Proceedings in Physics
Series Volume
120
Copyright
2008
Publisher
Springer Netherlands
Copyright Holder
Springer Science+Business Media B.V.
eBook ISBN
978-1-4020-8615-1
DOI
10.1007/978-1-4020-8615-1
Hardcover ISBN
978-1-4020-8614-4
Series ISSN
0930-8989
Edition Number
1
Number of Pages
XIV, 498
Additional Information
Jointly published with Canopus Publishing Limited, Bristol, UK
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