Springer Proceedings in Physics

Narrow Gap Semiconductors 2007

Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK

Editors: Murdin, Ben, Clowes, S.K. (Eds.)

    • A state-of-the-art report on new advances in the field of narrow gap semiconductors
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About this book

Narrow gap semiconductors have provided an exciting field of research and show a number of extreme physical and material characteristics. They are the established material systems for infrared detectors and emitters, and with new developments in the technology these materials are emerging as a viable route to high speed, low power electronics. New kinds of narrow gap semiconductor, such as graphene and other composite nanocrystals, are also providing renewed interest in the underlying physics.

The Thirteenth International Conference on Narrow Gap Semiconductors (NGS-13) was held at the University of Surrey, Guildford, UK in July 2007. The conference brought together experts and young scientists to discuss the latest findings and developments in the field. This book contains the invited and contributed papers which were presented at this meeting and serves to provide a broad overview of the current worldwide activities in narrow gap semiconductor research. The subjects covered are theoretical and material physics of narrow gap semiconductors and quantum heterostructures, spin related phenomenon including carrier dynamics and magnetotransport, carbon nanotubes and graphene as novel narrow gap material, as well as device physics including transistors, mid and far-infrared lasers and detectors.

Table of contents (49 chapters)

  • Gate Dependence of Spin-Splitting in an InSb/InAlSb Quantum Well

    Branford, W. R. (et al.)

    Pages 3-5

  • Photogalvanic Effects in HgTe Quantum Wells

    Wittmann, B. (et al.)

    Pages 7-9

  • Magnetic and Structural Properties of Ferromagnetic GeMnTe Layers

    Dziawa, P. (et al.)

    Pages 11-14

  • Control and Probe of Carrier and Spin Relaxations in InSb Based Structures

    Khodaparast, Giti A. (et al.)

    Pages 15-18

  • Density and Well-Width Dependence of the Spin Relaxation in n-InSb/AlInSb Quantum Wells

    Litvinenko, K. L. (et al.)

    Pages 19-21

Buy this book

eBook $209.00
price for USA (gross)
  • ISBN 978-1-4020-8425-6
  • Digitally watermarked, DRM-free
  • Included format: PDF
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Hardcover $269.00
price for USA
  • ISBN 978-1-4020-8424-9
  • Free shipping for individuals worldwide
  • This title is currently reprinting. You can pre-order your copy now.
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Bibliographic Information

Bibliographic Information
Book Title
Narrow Gap Semiconductors 2007
Book Subtitle
Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK
Editors
  • Ben Murdin
  • S.K. Clowes
Series Title
Springer Proceedings in Physics
Series Volume
119
Copyright
2008
Publisher
Springer Netherlands
Copyright Holder
Springer Science+Business Media B.V.
eBook ISBN
978-1-4020-8425-6
DOI
10.1007/978-1-4020-8425-6
Hardcover ISBN
978-1-4020-8424-9
Series ISSN
0930-8989
Edition Number
1
Number of Pages
XVI, 216
Additional Information
Jointly published with Canopus Publishing Limited, Bristol, UK
Topics