UV Solid-State Light Emitters and Detectors

1. Front Matter

   Pages i-xiv

   PDF

2. Basic Device Issues in UV Solid-State Emitters and Detectors

   • M. S. Shur, A. Žukauskas

   Pages 1-13

3. HVPE-Grown AlN-GaN Based Structures for UV Spectral Region

   • A. S. Usikov, Yu. Melnik, A. I. Pechnikov, V. A. Soukhoveev, O. V. Kovalenkov, E. Shapovalova et al.

   Pages 15-29

4. GaN-Based Laser Diodes

   • S. Einfeldt, S. Figge, T. BÖttcher, D. Hommel

   Pages 31-39

5. Quaternary AlInGaN Materials System for UV Optoelectronics

   • E. Kuokstis, G. Tamulaitis, M. Asif Khan

   Pages 41-58

6. III-Nitride Based UV Light Emiting Diodes

   • R. Gaska, M. Asif Khan, M. S. Shur

   Pages 59-75

7. UV Metal Semiconductor Metal Detectors

   • J.-L. Reverchon, M. Mosca, N. Grandjean, F. Omnes, F. Semond, J.-Y. Duboz et al.

   Pages 77-92

8. Characterization of Advanced Materials for Optoelectronics by Using UV Lasers and Four-Wave Mixing Techniques

   • K. Jarašiūnas

   Pages 93-109

9. Quantum Phospors

   • A. P. Vink, E. Van Der Kolk, P. Dorenbos, C. W. E. Van Eijk

   Pages 111-126

10. Optical Measurements Using Light-Emitting Diodes

    • A. Žukauskas, M. S. Shur, R. Gaska

    Pages 127-142

11. Novel Algan Heterostructures for UV Sensors and Leds

    • M. Stutzmann

    Pages 143-159

12. Nitride Photodetectors in UV Biological Effects Studies

    • E. Muñoz, J. L. Pau, C. Rivera

    Pages 161-177

13. Promising Results of Plasma Assisted MBE for Optoelectronic Applications

    • A. Georgakilas, E. Dimakis, K. Tsagaraki, M. Androulidaki

    Pages 179-188

14. Low Dislocations Density GaN/Sapphire for Optoelectronic Devices

    • B. Beaumont, J.-P. Faurie, E. Frayssinet, E. Aujol, P. Gibart

    Pages 189-197

15. Stimulated Emission and Gain in GaN Epilayers Grown on Si

    • A. L. Gurskii, E. V. Lutsenko, V. Z. Zubialevich, V. N. Pavlovskii, G. P. Yablonskii, K. Kazlauskas et al.

    Pages 199-206

16. Materials Characterization of Group-III Nitrides under High-Power Photoexcitation

    • S. Juršėnas, G. Kurilčik, S. Miasojedovas, A. Žukauskas

    Pages 207-214

17. Small Internal Electric Fields in Quaternary InAlGaN Heterostructures

    • S. Anceau, S. P. Łepkowski, H. Teisseyre, T. Suski, P. Perlin, P. Lefebvre et al.

    Pages 215-222

18. MOCVD Growth of AlGaN Epilayers and AlGaN/GaN SLs in a Wide Composition Range

    • W. V. Lundin, A. V. Sakharov, A. F. Tsatsul’nikov, E. E. Zavarin, A. I. Besulkin, A. V. Fomin et al.

    Pages 223-231

19. Gallium Nitride Schottky Barriers and MSM UV Detectors

    • B. Boratynski, M. Tlaczala

    Pages 233-238

20. III-Nitride Based Ultraviolet Surface Acoustic Wave Sensors

    • D. Čiplys, A. Sereika, R. Rimeika, R. Gaska, M. Shur, J. Yang et al.

    Pages 239-246

Infrared and visible light LEDs and photodetectors have found numerous applications and have become a truly enabling technology. The promise of solid state lighting has invigorated interest in white light LEDs. Ultraviolet LEDs and solar blind photodetectors represent the next frontier in solid state emitters and hold promise for many important applications in biology, medi­ cine, dentistry, solid state lighting, displays, dense data storage, and semi­ conductor manufacturing. One of the most important applications is in sys­ tems for the identification of hazardous biological agents. Compared to UV lamps, UV LEDs have lower power consumption, a longer life, compactness, and sharper spectral lines. UV LEDs can provide a variety of UV spectra and have shape and form factor flexibility and rugged­ ness. Using conventional phosphors, UV LEDs can generate white light with high CRI and high efficiency. If quantum cutter phosphors are developed, white light generation by UV LEDs might become even more efficient. Advances in semiconductor materials and in improved light extraction techniques led to the development of a new generation of efficient and pow­ erful visible high-brightness LEDs and we expect that similar improvements will be achieved in solid-state UV technology.

• LED
• Laser
• Sensor
• alloy
• optoelectronics
• polymer
• semiconductor
• spectroscopy

• Rensselaer Polytechnic Institute, Troy, USA

  Michael S. Shur

• Vilnius University, Vilnius, Lithuania

  Artūras Žukauskas

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