Nato Science Series II:

Progress in SOI Structures and Devices Operating at Extreme Conditions

Editors: Balestra, Francis, Nazarov, Alexei, Lysenko, Vladimir S. (Eds.)

Buy this book

eBook $84.99
price for USA (gross)
  • ISBN 978-94-010-0339-1
  • Digitally watermarked, DRM-free
  • Included format: PDF
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Hardcover $249.00
price for USA
  • ISBN 978-1-4020-0575-6
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
Softcover $109.00
price for USA
  • ISBN 978-1-4020-0576-3
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
About this book

A review of the electrical properties, performance and physical mechanisms of the main silicon-on-insulator (SOI) materials and devices. Particular attention is paid to the reliability of SOI structures operating in harsh conditions. The first part of the book deals with material technology and describes the SIMOX and ELTRAN technologies, the smart-cut technique, SiCOI structures and MBE growth. The second part covers reliability of devices operating under extreme conditions, with an examination of low and high temperature operation of deep submicron MOSFETs and novel SOI technologies and circuits, SOI in harsh environments and the properties of the buried oxide. The third part deals with the characterization of advanced SOI materials and devices, covering laser-recrystallized SOI layers, ultrashort SOI MOSFETs and nanostructures, gated diodes and SOI devices produced by a variety of techniques. The last part reviews future prospects for SOI structures, analyzing wafer bonding techniques, applications of oxidized porous silicon, semi-insulating silicon materials, self-organization of silicon dots and wires on SOI and some new physical phenomena.

Table of contents (27 chapters)

  • Perspectives of Simox Technology

    Anc, Maria J.

    Pages 1-10

  • MBE Growth of the top Layer in Si/YSZ/Si Structure

    Beshenkov, V. G. (et al.)

    Pages 11-15

  • SiCOI Structures. Technology and Characterization

    Serre, C. (et al.)

    Pages 17-29

  • New SiC on Insulator Wafers Based on the Smart-Cut® Approach and their Potential Applications

    Joly, J-P (et al.)

    Pages 31-38

  • ELTRAN® (SOI-Epi Wafer™) Technology

    Yonehara, Takao (et al.)

    Pages 39-86

Buy this book

eBook $84.99
price for USA (gross)
  • ISBN 978-94-010-0339-1
  • Digitally watermarked, DRM-free
  • Included format: PDF
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Hardcover $249.00
price for USA
  • ISBN 978-1-4020-0575-6
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
Softcover $109.00
price for USA
  • ISBN 978-1-4020-0576-3
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
Loading...

Recommended for you

Loading...

Bibliographic Information

Bibliographic Information
Book Title
Progress in SOI Structures and Devices Operating at Extreme Conditions
Editors
  • Francis Balestra
  • Alexei Nazarov
  • Vladimir S. Lysenko
Series Title
Nato Science Series II:
Series Volume
58
Copyright
2002
Publisher
Springer Netherlands
Copyright Holder
Springer Science+Business Media Dordrecht
eBook ISBN
978-94-010-0339-1
DOI
10.1007/978-94-010-0339-1
Hardcover ISBN
978-1-4020-0575-6
Softcover ISBN
978-1-4020-0576-3
Series ISSN
1568-2609
Edition Number
1
Number of Pages
X, 351
Topics