The Springer International Series in Engineering and Computer Science

Monte Carlo Device Simulation

Full Band and Beyond

Editors: Hess, Karl (Ed.)

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About this book

Monte Carlo simulation is now a well established method for studying semiconductor devices and is particularly well suited to highlighting physical mechanisms and exploring material properties. Not surprisingly, the more completely the material properties are built into the simulation, up to and including the use of a full band structure, the more powerful is the method. Indeed, it is now becoming increasingly clear that phenomena such as reliabil­ ity related hot-electron effects in MOSFETs cannot be understood satisfac­ torily without using full band Monte Carlo. The IBM simulator DAMOCLES, therefore, represents a landmark of great significance. DAMOCLES sums up the total of Monte Carlo device modeling experience of the past, and reaches with its capabilities and opportunities into the distant future. This book, therefore, begins with a description of the IBM simulator. The second chapter gives an advanced introduction to the physical basis for Monte Carlo simulations and an outlook on why complex effects such as collisional broadening and intracollisional field effects can be important and how they can be included in the simulations. References to more basic intro­ the book. The third chapter ductory material can be found throughout describes a typical relationship of Monte Carlo simulations to experimental data and indicates a major difficulty, the vast number of deformation poten­ tials required to simulate transport throughout the entire Brillouin zone. The fourth chapter addresses possible further extensions of the Monte Carlo approach and subtleties of the electron-electron interaction.

Table of contents (10 chapters)

  • Numerical Aspects and Implementation of theDamoclesMonte Carlo Device Simulation Program

    Laux, Steven E. (et al.)

    Pages 1-26

  • Scattering Mechanisms for Semiconductor Transport Calculations

    Bude, J.

    Pages 27-66

  • Evaluating Photoexcitation Experiments Using Monte Carlo Simulations

    Stanton, C. J. (et al.)

    Pages 67-97

  • Extensions of the Monte Carlo Simulation in Semiconductors to Fast Processes

    Ferry, D. K. (et al.)

    Pages 99-121

  • Theory and Calculation of the Deformation Potential Electron-Phonon Scattering Rates in Semiconductors

    Fischetti, M. V. (et al.)

    Pages 123-160

Buy this book

eBook $139.00
price for USA (gross)
  • ISBN 978-1-4615-4026-7
  • Digitally watermarked, DRM-free
  • Included format: PDF
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Hardcover $249.00
price for USA
  • ISBN 978-0-7923-9172-2
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
Softcover $179.00
price for USA
  • ISBN 978-1-4613-6800-7
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
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Bibliographic Information

Bibliographic Information
Book Title
Monte Carlo Device Simulation
Book Subtitle
Full Band and Beyond
Editors
  • Karl Hess
Series Title
The Springer International Series in Engineering and Computer Science
Series Volume
144
Copyright
1991
Publisher
Springer US
Copyright Holder
Springer Science+Business Media New York
eBook ISBN
978-1-4615-4026-7
DOI
10.1007/978-1-4615-4026-7
Hardcover ISBN
978-0-7923-9172-2
Softcover ISBN
978-1-4613-6800-7
Series ISSN
0893-3405
Edition Number
1
Number of Pages
X, 310
Topics