Device and Circuit Cryogenic Operation for Low Temperature Electronics

Editors: Balestra, Francis, Ghibaudo, G. (Eds.)

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About this book

Device and Circuit Cryogenic Operation for Low Temperature Electronics is a first in reviewing the performance and physical mechanisms of advanced devices and circuits at cryogenic temperatures that can be used for many applications.
The first two chapters cover bulk silicon and SOI MOSFETs. The electronic transport in the inversion layer, the influence of impurity freeze-out, the special electrical properties of SOI structures, the device reliability and the interest of a low temperature operation for the ultimate integration of silicon down to nanometer dimensions are described. The next two chapters deal with Silicon-Germanium and III-V Heterojunction Bipolar Transistors, as well as III-V High Electron Mobility Transistors (HEMT). The basic physics of the SiGe HBT and its unique cryogenic capabilities, the optimization of such bipolar devices, and the performance of SiGe HBT BiCMOS technology at liquid nitrogen temperature are examined. The physical effects in III-V semiconductors at low temperature, the HEMT and HBT static, high frequency and noise properties, and the comparison of various cooled III-V devices are also addressed. The next chapter treats quantum effect devices made of silicon materials. The major quantum effects at low temperature, quantum wires, quantum dots as well as single electron devices and applications are investigated. The last chapter overviews the performances of cryogenic circuits and their applications. The low temperature properties and performance of inverters, multipliers, adders, operational amplifiers, memories, microprocessors, imaging devices, circuits and systems, sensors and read-out circuits are analyzed.
Device and Circuit Cryogenic Operation for Low Temperature Electronics is useful for researchers, engineers, Ph.D. and M.S. students working in the field of advanced electron devices and circuits, new semiconductor materials, and low temperature electronics and physics.

Table of contents (7 chapters)

  • General Introduction

    Balestra, Francis (et al.)

    Pages 1-2

  • Device Physics and Electrical Performance of Bulk Silicon Mosfets

    Ghibaudo, Gérard (et al.)

    Pages 3-35

  • SOI MOSFETs

    Balestra, Francis (et al.)

    Pages 37-67

  • Silicon-Germanium Heterojunction Bipolar Transistor

    Cressler, John D.

    Pages 69-84

  • Heterojunction Transistors at Low Temperature

    Aniel, Frédéric (et al.)

    Pages 85-160

Buy this book

eBook $189.00
price for USA (gross)
  • ISBN 978-1-4757-3318-1
  • Digitally watermarked, DRM-free
  • Included format: PDF
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Hardcover $249.00
price for USA
  • ISBN 978-0-7923-7377-3
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
Softcover $249.00
price for USA
  • ISBN 978-1-4419-4898-4
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
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Bibliographic Information

Bibliographic Information
Book Title
Device and Circuit Cryogenic Operation for Low Temperature Electronics
Editors
  • Francis Balestra
  • G. Ghibaudo
Copyright
2001
Publisher
Springer US
Copyright Holder
Springer Science+Business Media Dordrecht
eBook ISBN
978-1-4757-3318-1
DOI
10.1007/978-1-4757-3318-1
Hardcover ISBN
978-0-7923-7377-3
Softcover ISBN
978-1-4419-4898-4
Edition Number
1
Number of Pages
VIII, 262
Topics