Hot Carriers in Semiconductors

Editors: Hess, Karl, Leburton, J.P., Ravaioli, U. (Eds.)

Buy this book

eBook $89.00
price for USA (gross)
  • ISBN 978-1-4613-0401-2
  • Digitally watermarked, DRM-free
  • Included format: PDF
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Hardcover $99.00
price for USA
  • ISBN 978-0-306-45366-3
  • Free shipping for individuals worldwide
  • This title is currently reprinting. You can pre-order your copy now.
Softcover $119.00
price for USA
  • ISBN 978-1-4613-8035-1
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
About this book

This volume contains invited and contributed papers of the Ninth International Conference on Hot Carriers in Semiconductors (HCIS-9), held July 3 I-August 4, 1995 in Chicago, Illinois. In all, the conference featured 15 invited oral presentations, 60 contributed oral presentations, and 105 poster presentations, and an international contingent of 170 scientists. As in recent conferences, the main themes of the conference were related to nonlinear transport in semiconductor heterojunctions and included Bloch oscillations, laser diode structures, and femtosecond spectroscopy. Interesting questions related to nonlinear transport, size quantization, and intersubband scattering were addressed that are relevant to the new quantum cascade laser. Many lectures were geared toward quantum wires and dots and toward nanostructures and mesoscopic systems in general. It is expected that such research will open new horizons to nonlinear transport studies. An attempt was made by the program committee to increase the number of presen­ tations related directly to devices. The richness of nonlocal hot electron effects that were discussed as a result, in our opinion, suggests that future conferences should further encourage reports on such device research. On behalf of the Program and International Advisory Committees, we thank the participants, who made the conference a successful and pleasant experience, and the support of the Army Research Office, the Office of Naval Research, and the Beckman Institute of the University of Illinois at Urbana-Champaign. We are also indebted to Mrs. Sara Starkey and Mrs.

Table of contents (146 chapters)

  • Field-Induced Exciton Ionization Studied by Four-Wave Mixing

    Koch, M. (et al.)

    Pages 3-6

  • Dephasing of Excitons in Multiple Quantum Well Bragg Structures

    Hübner, M. (et al.)

    Pages 7-10

  • Temperature Dependence of Photoluminescence in InGaAsP/InP Strained MQW Heterostructures

    Raisky, O. Y. (et al.)

    Pages 11-13

  • Spin-flip Dynamics of Excitons in GaAs Quantum Wells

    Lohner, A. (et al.)

    Pages 15-18

  • Dynamics of Exciton Formation and Relaxation in Semiconductors

    Selbmann, P. E. (et al.)

    Pages 19-22

Buy this book

eBook $89.00
price for USA (gross)
  • ISBN 978-1-4613-0401-2
  • Digitally watermarked, DRM-free
  • Included format: PDF
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Hardcover $99.00
price for USA
  • ISBN 978-0-306-45366-3
  • Free shipping for individuals worldwide
  • This title is currently reprinting. You can pre-order your copy now.
Softcover $119.00
price for USA
  • ISBN 978-1-4613-8035-1
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
Loading...

Services for this Book

Recommended for you

Loading...

Bibliographic Information

Bibliographic Information
Book Title
Hot Carriers in Semiconductors
Editors
  • Karl Hess
  • J.P. Leburton
  • U. Ravaioli
Copyright
1996
Publisher
Springer US
Copyright Holder
Plenum Press, New York
eBook ISBN
978-1-4613-0401-2
DOI
10.1007/978-1-4613-0401-2
Hardcover ISBN
978-0-306-45366-3
Softcover ISBN
978-1-4613-8035-1
Edition Number
1
Number of Pages
635
Topics