Nato Science Series B:

Quantum Transport in Ultrasmall Devices

Proceedings of a NATO Advanced Study Institute on Quantum Transport in Ultrasmall Devices, held July 17–30, 1994, in II Ciocco, Italy

Editors: Ferry, D., Grubin, H.L., Jacoboni, C., Jauho, A.-P. (Eds.)

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About this book

The operation of semiconductor devices depends upon the use of electrical potential barriers (such as gate depletion) in controlling the carrier densities (electrons and holes) and their transport. Although a successful device design is quite complicated and involves many aspects, the device engineering is mostly to devise a "best" device design by defIning optimal device structures and manipulating impurity profIles to obtain optimal control of the carrier flow through the device. This becomes increasingly diffIcult as the device scale becomes smaller and smaller. Since the introduction of integrated circuits, the number of individual transistors on a single chip has doubled approximately every three years. As the number of devices has grown, the critical dimension of the smallest feature, such as a gate length (which is related to the transport length defIning the channel), has consequently declined. The reduction of this design rule proceeds approximately by a factor of 1. 4 each generation, which means we will be using 0. 1-0. 15 ). lm rules for the 4 Gb chips a decade from now. If we continue this extrapolation, current technology will require 30 nm design rules, and a cell 3 2 size < 10 nm , for a 1Tb memory chip by the year 2020. New problems keep hindering the high-performance requirement. Well-known, but older, problems include hot carrier effects, short-channel effects, etc. A potential problem, which illustrates the need for quantum transport, is caused by impurity fluctuations.

Reviews

`This work is outstanding....The charm of the work lies herein, that it presents in a coherent fashion a great deal of valuable material. I strongly recommend it in particular to graduate students in experimental semiconductor physics.'
Contemporary Physics

Table of contents (44 chapters)

  • Introduction to Quantum Transport

    Jacoboni, C. (et al.)

    Pages 1-39

  • Traditional Modelling of Semiconductor Devices

    Snowden, Christopher M.

    Pages 41-76

  • Quantum Confined Systems: Wells, Wires, and Dots

    Rössler, U.

    Pages 77-109

  • Fabrication of Nanoscale Devices

    Reed, Mark A. (et al.)

    Pages 111-132

  • Artificial Impurities in Quantum Wires and Dots

    Sachrajda, A. S. (et al.)

    Pages 133-140

Buy this book

eBook $249.00
price for USA (gross)
  • ISBN 978-1-4615-1967-6
  • Digitally watermarked, DRM-free
  • Included format: PDF
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Hardcover $319.00
price for USA
  • ISBN 978-0-306-44999-4
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
Softcover $319.00
price for USA
  • ISBN 978-1-4613-5809-1
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
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Bibliographic Information

Bibliographic Information
Book Title
Quantum Transport in Ultrasmall Devices
Book Subtitle
Proceedings of a NATO Advanced Study Institute on Quantum Transport in Ultrasmall Devices, held July 17–30, 1994, in II Ciocco, Italy
Editors
  • David Ferry
  • Harold L. Grubin
  • Carlo Jacoboni
  • A.-P. Jauho
Series Title
Nato Science Series B:
Series Volume
342
Copyright
1995
Publisher
Springer US
Copyright Holder
Springer Science+Business Media New York
eBook ISBN
978-1-4615-1967-6
DOI
10.1007/978-1-4615-1967-6
Hardcover ISBN
978-0-306-44999-4
Softcover ISBN
978-1-4613-5809-1
Series ISSN
0258-1221
Edition Number
1
Number of Pages
X, 544
Topics