The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2

Editors: Deal, B.E., Helms, C.R. (Eds.)

Buy this book

eBook $269.00
price for USA (gross)
  • ISBN 978-1-4899-1588-7
  • Digitally watermarked, DRM-free
  • Included format: PDF
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Hardcover $339.00
price for USA
  • ISBN 978-0-306-44419-7
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
Softcover $339.00
price for USA
  • ISBN 978-1-4899-1590-0
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
About this book

The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.

Table of contents (54 chapters)

  • Silicon Oxides and Oxidation

    Stoneham, A. Marshall

    Pages 3-6

  • Use of 18O Labelling to Study Growth Mechanisms in Dry Oxidation of Silicon

    Trimaille, Isabelle (et al.)

    Pages 7-13

  • Strain Dependent Diffusion During Dry Thermal Oxidation of Crystalline Si

    Bjorkman, C. H. (et al.)

    Pages 15-21

  • Oxidation of Silicon in Oxygen: Measurement of Film Thickness and Kinetics

    Kao, S. C. (et al.)

    Pages 23-30

  • Modeling Process-Dependent Thermal Silicon Dioxide (SiO2) Films on Silicon

    Wei, H. F. (et al.)

    Pages 31-41

Buy this book

eBook $269.00
price for USA (gross)
  • ISBN 978-1-4899-1588-7
  • Digitally watermarked, DRM-free
  • Included format: PDF
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Hardcover $339.00
price for USA
  • ISBN 978-0-306-44419-7
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
Softcover $339.00
price for USA
  • ISBN 978-1-4899-1590-0
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
Loading...

Services for this Book

Recommended for you

Loading...

Bibliographic Information

Bibliographic Information
Book Title
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2
Editors
  • B.E. Deal
  • C.R. Helms
Copyright
1993
Publisher
Springer US
Copyright Holder
Springer Science+Business Media New York
eBook ISBN
978-1-4899-1588-7
DOI
10.1007/978-1-4899-1588-7
Hardcover ISBN
978-0-306-44419-7
Softcover ISBN
978-1-4899-1590-0
Edition Number
1
Number of Pages
XVI, 503
Topics