The Physics and Chemistry of SiO2 and the Si-SiO2 Interface

Editors: Deal, B.E., Helms, C.R. (Eds.)

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About this book

The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.

Table of contents (60 chapters)

  • Historical Perspectives of Silicon Oxidation

    Deal, Bruce E.

    Pages 5-16

  • Oxidation of Silicon: Tests of Mechanisms

    Doremus, Robert H.

    Pages 17-23

  • Silicon Oxidation Models Based on Parallel Mechanisms

    Helms, C. R. (et al.)

    Pages 25-34

  • The Role of SiO in Si Oxidation at a Si-SiO2 Interface

    Raider, S. I.

    Pages 35-42

  • Uncertainty Analysis of Analytic Oxidation Models

    Ling, Zhi-Min (et al.)

    Pages 43-51

Buy this book

eBook $269.00
price for USA (gross)
  • ISBN 978-1-4899-0774-5
  • Digitally watermarked, DRM-free
  • Included format: PDF
  • ebooks can be used on all reading devices
  • Immediate eBook download after purchase
Hardcover $339.00
price for USA
  • ISBN 978-0-306-43032-9
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
Softcover $339.00
price for USA
  • ISBN 978-1-4899-0776-9
  • Free shipping for individuals worldwide
  • Usually dispatched within 3 to 5 business days.
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Bibliographic Information

Bibliographic Information
Book Title
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface
Editors
  • B.E. Deal
  • C.R. Helms
Copyright
1988
Publisher
Springer US
Copyright Holder
Springer Science+Business Media New York
eBook ISBN
978-1-4899-0774-5
DOI
10.1007/978-1-4899-0774-5
Hardcover ISBN
978-0-306-43032-9
Softcover ISBN
978-1-4899-0776-9
Edition Number
1
Number of Pages
XIV, 556
Topics