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Physics - Optics & Lasers | III-Nitride Based Light Emitting Diodes and Applications (Authors and Editors)

III-Nitride Based Light Emitting Diodes and Applications

Series: Topics in Applied Physics, Vol. 126

Seong, T.-Y., Han, J., Amano, H., Morkoc, H. (Eds.)

2013, XIII, 390 p. 271 illus.

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Tae-Yeon Seong received his PhD from the University of Oxford. He is a Professor of Materials Science and Engineering and currently Chair of Department of Nanophotonics at Korea University. His research focuses on the area of wide band-gap materials and devices (emitters, detectors and electronics) using GaN and ZnO and developing these materials for illumination applications.  He has authored and coauthored more than 340 peer-reviewed journal papers and holds 130 patents. He is a Fellow of the Institute of Physics (UK) and SPIE, an Associate Editor of Semiconductor Science and Technology, and an Editorial Advisory Committee Member of the Electrochemical Society Journals.

Jung Han is a Professor and currently the Chair of Electrical Engineering Department at Yale University. Before joining Yale University in 2001, he was a senior member of technical staff at Sandia National Laboratories, where he established a wide bandgap III-nitride semiconductor research effort for visible and ultraviolet LEDs. His current research activities includes the visible InGaN light emitting structures for energy-efficient solid state lighting, nano-scale synthesis of AlGaInN heterostructures, and hybrid inorganic-organic flexible optoelectronics. He has authored and coauthored more than 200 papers in peer-reviewed journals and holds 7 US patents. He is a fellow of Institute of Physics, UK. The awards he received include MRS Ribbon Award (2005) and R&D 100 (2004).

Hiroshi Amano received D.Eng from Nagoya University. He is a Professor at Department of Electrical Engineering and Computer Science, Nagoya University. In 1985, he developed low-temperature deposited buffer layers which provided the technology vendors to the development of high-quality group III semiconductor based LEDs and LDs. In 1989, he succeeded in growing p-type GaN and fabricating p-n junction LEDs for the first time in the world. He has published more than 440 technical papers. The awards he received include: 1996 IEEE/LEOS Engineering Achievement Award, 1998 Japan Society for Applied Physics C Award, 1998 Rank Award, 2001 Marubun Academic Award, and 2002 Takeda Award.

Hadis Morkoç received Ph.D. from Cornell University, NY, and Honoris Causa from University of Montpellier II. He held positions at Varian Associates, Palo Alto, CA, University of IL at Urbana-Champaign, AT&T Bell Laboratories, Caltech and JPL, and Air Force Research Laboratories. He is with School of Engineering at VCU, Richmond VA. He is among the most cited with over 1600 publications. He is a Fellow of AAAS, APS and IEEE, and member of Sigma Xi (Life member), Eta Kappa Nu, Phi Kappa Phi (Life member), Sigma Pi Sigma, Tau, Beta Pi, and International Men of Achievement, and ISI highly cited authors.

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