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Physics - Optics & Lasers | III-Nitride Based Light Emitting Diodes and Applications

III-Nitride Based Light Emitting Diodes and Applications

Series: Topics in Applied Physics, Vol. 126

Seong, T.-Y., Han, J., Amano, H., Morkoc, H. (Eds.)

2013, XIII, 390 p. 271 illus.

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  • Captures an accurate snapshot regarding the field and provide an insightful review to all the key issues in anticipation of the revolution in lighting technology
  • Provides a comprehensive coverage of contemporary LED issues, such as efficiency droop, green gap, GaN on silicon, and high voltage LEDs, which have not been adequately discussed in the published book
  • A valuable source of information for newcomers and experienced researchers working in the field.
  • Provides a comprehensive coverage of contemporary LED issues, such as efficiency droop, green gap, GaN on silicon, and high voltage LEDs, which have not been adequately discussed in the published book
  • A valuable source of information for newcomers and experienced researchers working in the field.
  • A valuable source of information for newcomers and experienced researchers working in the field.
Light emitting diodes (LEDs) are already used in traffic signals, signage lighting, and automotive applications. However, its ultimate goal is to replace traditional illumination through LED lamps since LED lighting significantly reduces energy consumption and cuts down on carbon-dioxide emission. Despite dramatic advances in LED technologies (e.g., growth, doping and processing technologies), however, there remain critical issues for further improvements yet to be achieved for the realization of solid-state lighting. This book aims to provide the readers with some contemporary LED issues, which have not been comprehensively discussed in the published books and, on which the performance of LEDs is seriously dependent. For example, most importantly, there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and and In-rich GaN-based semiconductors. The materials quality is directly dependent on the substrates used, such as sapphire, Si, etc. In addition, efficiency droop, growth on different orientations and polarization are also important. Chip processing and packaging technologies are key issues. This book presents a comprehensive review of contemporary LED issues. Given the interest and importance of future research in nitride semiconducting materials and solid state lighting applications, the contents are very timely. The book is composed of chapters written by leading researchers in III-nitride semiconducting materials and device technology. This book will be of interest to scientists and engineers working on LEDs for lighting applications. Postgraduate researchers working on LEDs will also benefit from the issues this book provides.

Content Level » Research

Keywords » High Voltage LEDs - III-Nitride Based Semiconductors - Integrated Circuits - LED - Laser Diodes - Light Emitting Diodes - Packaging - Packaging Technology - Quantum efficiency - Solid State Lighting

Related subjects » Applied & Technical Physics - Condensed Matter Physics - Electronics & Electrical Engineering - Optics & Lasers

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