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Physics - Optics & Lasers | Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications

Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications

Series: Topics in Applied Physics, Vol. 124

O'Donnell, Kevin Peter, Dierolf, Volkmar (Eds.)

Jointly published with Canopus Academic Publishing Ltd

2010, XVI, 355 p.

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  • Provides a snapshot of the field at a critical point in its development
  • Summarises recent progress in the science and technology of rare-earth doped nitrides
  • First book on rare-earth doped III-Nitrides and semiconductors
This book provides a snapshot of recent progress in the field of rare-earth-doped group III-nitride semiconductors, especially GaN, but extending to AlN and the alloys AlGaN, AlInN and InGaN. This material class is currently enjoying an upsurge in interest due to its ideal suitability for both optoelectronic and spintronic applications. The text first introduces the reader to the historical background and the major theoretical challenges presented when 4f electron systems are embedded in a semiconductor matrix. It details the preparation of samples for experimental study, either by in-situ growth or ion implantation/annealing, and describes their microscopic structural characterisation. Optical spectroscopy is a dominant theme, complicated by site multiplicity, whether in homogeneous hosts or in heterostructures such as quantum dots, and enlivened by the abiding fascination of the energy transfer mechanism between the host material and the lumophore. Finally, the rapid progress towards prospective optoelectronic and spintronic devices is presented along with several examples.

Content Level » Research

Keywords » development - material - non-destructive testing - quantum dot - semiconductor - spintronics

Related subjects » Atomic, Molecular, Optical & Plasma Physics - Optical & Electronic Materials - Optics & Lasers

Table of contents 

1.Introduction and overview. Kevin O’DONNELL, Strathclyde, UK. 2.Theoretical background. Robert JONES, Exeter and Benjamin HOURAHINE, Strathclyde, UK. 3.In-situ doping of MBE III-N: RE epilayers. Andrew STECKL and John ZAVADA, Nanolab Cincinatti, USA. 4.RE implantation and annealing of III-Nitrides. Katharina LORENZ and Eduardo ALVEZ, ITN Lisbon, Portugal. 5.Lattice location studies of RE impurities in III-Nitrides. Andre VANTOMME, IKS Leuven, Belgium. 6.Microscopic characterisation of luminescent III-N:RE epilayers. Robert MARTIN, Strathclyde, UK 7.High-resolution optical studies of site multiplicity in III-N:RE. Volkmar DIEROLF, Lehigh, USA. 8.RE-doped III-N quantum dots. Bruno DAUDIN, Grenoble, France. 9.Excitation model for RE ions in solids. Alain BRAUD and Pierre RUTERANA, Caen, France. 10.III-N:RE electroluminescence. Andrew STECKL and John ZAVADA, Nanolab Cincinatti, USA. 11.RE-doped III-N for spintronics applications. Oliver BRANDT, PDI Berlin, Germany. 12.Summary and prospects for future work. Kevin O’DONNELL, Strathclyde, UK.

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