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Physics - Optics & Lasers | Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

Ueda, Osamu, Pearton, Stephen J. (Eds.)

2013, XVI, 616 p.

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  • Provides the first handbook to cover all aspects of compound semiconductor device reliability
  • Systematically describes research results on reliability and materials issues of both optical and electron devices developed since 2000
  • Covers characterization techniques needed to understand failure mechanisms in compound semiconductor devices
  • Includes experimental approaches in reliability studies
  • Presents case studies of laser degradation and HEMT degradation

Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature.

The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability.  Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms.

Provides the first handbook to cover all aspects of compound semiconductor device reliability

Systematically describes research results on reliability and materials issues of both optical and electron devices developed since 2000

Covers characterization techniques needed to understand failure mechanisms in compound semiconductor devices

Includes experimental approaches in reliability studies

Presents case studies of laser degradation and HEMT degradation

Content Level » Research

Keywords » AlGaN/GaN High Electron Mobility Transistors - Devices failure analysis - Devices reliability - Electrical devices degradation failure - Electronic device reliability - Failure Analysis of Semiconductor Optical Devices - GaN Device Passivation - InGaN Laser Diode Degradation - Materials Issues and Reliability of Electron Devices - Materials reliability book - Optical Evaluation Technique (OBIC) - Optical devices degradation failure - Reliability Simulation - Reliability Testing Semiconductor Optical Devices - Semiconductor Optical Devices, Reliability Testing - Semiconductor devices failure - Strain Effects in AlGaN/GaN HEMTs

Related subjects » Applied & Technical Physics - Characterization & Evaluation of Materials - Electronics & Electrical Engineering - Optical & Electronic Materials - Optics & Lasers

Table of contents 

Preface

Part 1: Materials Issues and Reliability of Optical Devices
1. Reliability Testing of Semiconductor Optical Devices
2. Failure Analysis of Semiconductor Optical Devices
3. Failure Analysis using Optical Evaluation Technique (OBIC) of LDs and APDs for Fiber Optical Communication
4. Reliability and Degradation of III-V Optical Devices Focusing on Gradual Degradation
5. Catastrophic Optical-damage in High Power, Broad-Area Laser-diodes
6. Reliability and Degradation of Vertical Cavity Surface Emitting Lasers
7. Structural Defects in GaN-based Materials and Their Relation to GaN-based Laser Diodes
8. InGaN Laser Diode Degradation
9. Radiation-enhanced Dislocation Glide - The Current Status of Research
10. Mechanism of Defect Reactions in Semiconductors

Part 2: Materials Issues and Reliability of Electron Devices
11. Reliability Studies in the Real World
12. Strain Effects in AlGaN/GaN HEMTs
13. Reliability Issues in AlGaN/GaN High Electron Mobility Transistors
14. GaAs Device Reliability: High Electron Mobility Transistors and Heterojunction Bipolar Transistors
15. Novel Dielectrics for GaN Device Passivation And Improved Reliability
16. Reliability Simulation
17. The Analysis of Wide Bandgap Semiconductors Using Raman Spectroscopy
18. Reliability Study of InP-Based HBTs Operating at High Current Density
Index

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